A β-SiC MOSFET Monte Carlo simulator including inversion layer quantization

F. Gámiz; J. B. Roldán; J. A. López-Villanueva

doi:10.1155/1998/94915

A β-SiC MOSFET Monte Carlo simulator including inversion layer quantization

F. Gámiz
, J. B. Roldán
, J. A. López-Villanueva

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Electron transport properties in SiC quantized inversion layers have been studied by means of a Monte Carlo procedure. It has been observed that the contribution of polaroptical phonon scattering produces a significant influence of the effective-electric field on the high longitudinal field transport regime, this being the main difference of SiC with respect to standard Si inversion layers. The energy- and momentum-relaxation times have been calculated and the results suggest that electron velocity overshoot effects are less important than in Si MOSFETs. The electron mobility is not very different from their silicon counterparts, but the saturation velocity is higher.

Original language	English
Pages (from-to)	257-260
Number of pages	4
Journal	VLSI Design
Volume	8
Issue number	1-4
DOIs	https://doi.org/10.1155/1998/94915
State	Published - 1 Jan 1998
Externally published	Yes

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10.1155/1998/94915

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@article{63795f804901422b99aae15c8ca15252,

title = "A β-SiC MOSFET Monte Carlo simulator including inversion layer quantization",

abstract = "Electron transport properties in SiC quantized inversion layers have been studied by means of a Monte Carlo procedure. It has been observed that the contribution of polaroptical phonon scattering produces a significant influence of the effective-electric field on the high longitudinal field transport regime, this being the main difference of SiC with respect to standard Si inversion layers. The energy- and momentum-relaxation times have been calculated and the results suggest that electron velocity overshoot effects are less important than in Si MOSFETs. The electron mobility is not very different from their silicon counterparts, but the saturation velocity is higher.",

keywords = "Electron mobility, High field transport properties, Inversion layer, Polaroptical phonon scattering, Silicon carbide",

author = "F. G{\'a}miz and Rold{\'a}n, \{J. B.\} and L{\'o}pez-Villanueva, \{J. A.\}",

year = "1998",

month = jan,

day = "1",

doi = "10.1155/1998/94915",

language = "English",

volume = "8",

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journal = "VLSI Design",

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TY - JOUR

T1 - A β-SiC MOSFET Monte Carlo simulator including inversion layer quantization

AU - Gámiz, F.

AU - Roldán, J. B.

AU - López-Villanueva, J. A.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - Electron transport properties in SiC quantized inversion layers have been studied by means of a Monte Carlo procedure. It has been observed that the contribution of polaroptical phonon scattering produces a significant influence of the effective-electric field on the high longitudinal field transport regime, this being the main difference of SiC with respect to standard Si inversion layers. The energy- and momentum-relaxation times have been calculated and the results suggest that electron velocity overshoot effects are less important than in Si MOSFETs. The electron mobility is not very different from their silicon counterparts, but the saturation velocity is higher.

AB - Electron transport properties in SiC quantized inversion layers have been studied by means of a Monte Carlo procedure. It has been observed that the contribution of polaroptical phonon scattering produces a significant influence of the effective-electric field on the high longitudinal field transport regime, this being the main difference of SiC with respect to standard Si inversion layers. The energy- and momentum-relaxation times have been calculated and the results suggest that electron velocity overshoot effects are less important than in Si MOSFETs. The electron mobility is not very different from their silicon counterparts, but the saturation velocity is higher.

KW - Electron mobility

KW - High field transport properties

KW - Inversion layer

KW - Polaroptical phonon scattering

KW - Silicon carbide

UR - https://www.scopus.com/pages/publications/0032315203

U2 - 10.1155/1998/94915

DO - 10.1155/1998/94915

M3 - Article

AN - SCOPUS:0032315203

SN - 1065-514X

VL - 8

SP - 257

EP - 260

JO - VLSI Design

JF - VLSI Design

IS - 1-4

ER -

A β-SiC MOSFET Monte Carlo simulator including inversion layer quantization

Abstract

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