A comparison of models for phonon scattering in silicon inversion layers

F. Gámiz; J. A. López-Villanueva

doi:10.1063/1.359500

A comparison of models for phonon scattering in silicon inversion layers

F. Gámiz
, J. A. López-Villanueva

Research output: Contribution to journal › Review article › peer-review

17 Scopus citations

Abstract

Two-dimensional (2D) and quasi-two-dimensional (Q2D) models for phonon scattering in Si-(100) inversion layers are compared. An analytical expression for an electron mobility component limited by phonons, recently reported with the 2D model, is modified by using the Q2D approach.

Original language	English
Pages (from-to)	4128-4129
Number of pages	2
Journal	Journal of Applied Physics
Volume	77
Issue number	8
DOIs	https://doi.org/10.1063/1.359500
State	Published - 1 Jan 1995
Externally published	Yes

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title = "A comparison of models for phonon scattering in silicon inversion layers",

abstract = "Two-dimensional (2D) and quasi-two-dimensional (Q2D) models for phonon scattering in Si-(100) inversion layers are compared. An analytical expression for an electron mobility component limited by phonons, recently reported with the 2D model, is modified by using the Q2D approach.",

author = "F. G{\'a}miz and L{\'o}pez-Villanueva, \{J. A.\}",

year = "1995",

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AU - Gámiz, F.

AU - López-Villanueva, J. A.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - Two-dimensional (2D) and quasi-two-dimensional (Q2D) models for phonon scattering in Si-(100) inversion layers are compared. An analytical expression for an electron mobility component limited by phonons, recently reported with the 2D model, is modified by using the Q2D approach.

AB - Two-dimensional (2D) and quasi-two-dimensional (Q2D) models for phonon scattering in Si-(100) inversion layers are compared. An analytical expression for an electron mobility component limited by phonons, recently reported with the 2D model, is modified by using the Q2D approach.

UR - https://www.scopus.com/pages/publications/36449002643

U2 - 10.1063/1.359500

DO - 10.1063/1.359500

M3 - Review article

AN - SCOPUS:36449002643

SN - 0021-8979

VL - 77

SP - 4128

EP - 4129

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -

A comparison of models for phonon scattering in silicon inversion layers

Abstract

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