A comprehensive model for Coulomb scattering in inversion layers

F. Gámiz; J. A. López-Villanueva; J. A. Jiménez-Tejada; I. Melchor; A. Palma

doi:10.1063/1.356448

A comprehensive model for Coulomb scattering in inversion layers

F. Gámiz
, J. A. López-Villanueva
, J. A. Jiménez-Tejada
, I. Melchor
, A. Palma

Research output: Contribution to journal › Article › peer-review

91 Scopus citations

Abstract

A comprehensive model for Coulomb scattering in inversion layers is presented. This model simultaneously takes into account the effects of: (i) the screening of charged centers by mobile carriers, (ii) the distribution of charged centers inside the structure, (iii) the actual electron distribution in the inversion layer, (iv) the charged-center correlation, and (v) the effect of image charges. A Monte Carlo calculation to obtain the effective mobility of electrons in an n-Si(100) inversion layer by using the model proposed for Coulomb scattering has been developed. The importance of correctly taking into account the effects above to study Coulomb scattering in inversion layers is pointed out.

Original language	English
Pages (from-to)	924-934
Number of pages	11
Journal	Journal of Applied Physics
Volume	75
Issue number	2
DOIs	https://doi.org/10.1063/1.356448
State	Published - 1 Dec 1994
Externally published	Yes

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10.1063/1.356448

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title = "A comprehensive model for Coulomb scattering in inversion layers",

abstract = "A comprehensive model for Coulomb scattering in inversion layers is presented. This model simultaneously takes into account the effects of: (i) the screening of charged centers by mobile carriers, (ii) the distribution of charged centers inside the structure, (iii) the actual electron distribution in the inversion layer, (iv) the charged-center correlation, and (v) the effect of image charges. A Monte Carlo calculation to obtain the effective mobility of electrons in an n-Si(100) inversion layer by using the model proposed for Coulomb scattering has been developed. The importance of correctly taking into account the effects above to study Coulomb scattering in inversion layers is pointed out.",

author = "F. G{\'a}miz and L{\'o}pez-Villanueva, \{J. A.\} and Jim{\'e}nez-Tejada, \{J. A.\} and I. Melchor and A. Palma",

year = "1994",

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T1 - A comprehensive model for Coulomb scattering in inversion layers

AU - Gámiz, F.

AU - López-Villanueva, J. A.

AU - Jiménez-Tejada, J. A.

AU - Melchor, I.

AU - Palma, A.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - A comprehensive model for Coulomb scattering in inversion layers is presented. This model simultaneously takes into account the effects of: (i) the screening of charged centers by mobile carriers, (ii) the distribution of charged centers inside the structure, (iii) the actual electron distribution in the inversion layer, (iv) the charged-center correlation, and (v) the effect of image charges. A Monte Carlo calculation to obtain the effective mobility of electrons in an n-Si(100) inversion layer by using the model proposed for Coulomb scattering has been developed. The importance of correctly taking into account the effects above to study Coulomb scattering in inversion layers is pointed out.

AB - A comprehensive model for Coulomb scattering in inversion layers is presented. This model simultaneously takes into account the effects of: (i) the screening of charged centers by mobile carriers, (ii) the distribution of charged centers inside the structure, (iii) the actual electron distribution in the inversion layer, (iv) the charged-center correlation, and (v) the effect of image charges. A Monte Carlo calculation to obtain the effective mobility of electrons in an n-Si(100) inversion layer by using the model proposed for Coulomb scattering has been developed. The importance of correctly taking into account the effects above to study Coulomb scattering in inversion layers is pointed out.

UR - https://www.scopus.com/pages/publications/0000609531

U2 - 10.1063/1.356448

DO - 10.1063/1.356448

M3 - Article

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VL - 75

SP - 924

EP - 934

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 2

ER -

A comprehensive model for Coulomb scattering in inversion layers

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