A model for the drain current of deep submicrometer MOSFET's including electron-velocity overshoot

J. B. Roldân; F. Gâmiz; J. A. Lopez-Villanueva; P. Cartujo; J. E. Carceller

doi:10.1109/16.725262

A model for the drain current of deep submicrometer MOSFET's including electron-velocity overshoot

J. B. Roldân
, F. Gâmiz
, J. A. Lopez-Villanueva
, P. Cartujo
, J. E. Carceller

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

We have developed a new analytical ultra-short channel MOSFET model for circuit simulation including velocity overshoot effects. We have been able to reproduce experimental I-V curves and conductances of MOSFET's down to 0.07 /jm channel lengths both at low and room temperatures.

Original language	English
Pages (from-to)	2249-2251
Number of pages	3
Journal	IEEE Transactions on Electron Devices
Volume	45
Issue number	10
DOIs	https://doi.org/10.1109/16.725262
State	Published - 1 Dec 1998
Externally published	Yes

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10.1109/16.725262

Cite this

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title = "A model for the drain current of deep submicrometer MOSFET's including electron-velocity overshoot",

abstract = "We have developed a new analytical ultra-short channel MOSFET model for circuit simulation including velocity overshoot effects. We have been able to reproduce experimental I-V curves and conductances of MOSFET's down to 0.07 /jm channel lengths both at low and room temperatures.",

keywords = "Mos devices, Semiconductor device modeling",

author = "Rold{\^a}n, \{J. B.\} and F. G{\^a}miz and Lopez-Villanueva, \{J. A.\} and P. Cartujo and Carceller, \{J. E.\}",

year = "1998",

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AU - Roldân, J. B.

AU - Gâmiz, F.

AU - Lopez-Villanueva, J. A.

AU - Cartujo, P.

AU - Carceller, J. E.

PY - 1998/12/1

Y1 - 1998/12/1

N2 - We have developed a new analytical ultra-short channel MOSFET model for circuit simulation including velocity overshoot effects. We have been able to reproduce experimental I-V curves and conductances of MOSFET's down to 0.07 /jm channel lengths both at low and room temperatures.

AB - We have developed a new analytical ultra-short channel MOSFET model for circuit simulation including velocity overshoot effects. We have been able to reproduce experimental I-V curves and conductances of MOSFET's down to 0.07 /jm channel lengths both at low and room temperatures.

KW - Mos devices

KW - Semiconductor device modeling

UR - https://www.scopus.com/pages/publications/0032188235

U2 - 10.1109/16.725262

DO - 10.1109/16.725262

M3 - Article

AN - SCOPUS:0032188235

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EP - 2251

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 10

ER -

A model for the drain current of deep submicrometer MOSFET's including electron-velocity overshoot

Abstract

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