A simple subthreshold swing model for short channel MOSFETs

A. Godoy; J. A. López-Villanueva; J. A. Jiménez-Tejada; A. Palma; F. Gámiz

doi:10.1016/S0038-1101(01)00060-0

A simple subthreshold swing model for short channel MOSFETs

A. Godoy
, J. A. López-Villanueva
, J. A. Jiménez-Tejada
, A. Palma
, F. Gámiz

Research output: Contribution to journal › Article › peer-review

59 Scopus citations

Abstract

A new approach to calculate the subthreshold swing of short channel bulk and silicon-on-insulator metal oxide semiconductor field effect transistors is presented. The procedure utilizes a channel-potential expression appropriate for submicron dimensions. The final result is similar to that used for long channels except for a factor λ which represents the short channel effects. Comparison with different published results reveals excellent quantitative agreement.

Original language	English
Pages (from-to)	391-397
Number of pages	7
Journal	Solid State Electronics
Volume	45
Issue number	3
DOIs	https://doi.org/10.1016/S0038-1101(01)00060-0
State	Published - 1 Mar 2001
Externally published	Yes

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10.1016/S0038-1101(01)00060-0

Cite this

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title = "A simple subthreshold swing model for short channel MOSFETs",

abstract = "A new approach to calculate the subthreshold swing of short channel bulk and silicon-on-insulator metal oxide semiconductor field effect transistors is presented. The procedure utilizes a channel-potential expression appropriate for submicron dimensions. The final result is similar to that used for long channels except for a factor λ which represents the short channel effects. Comparison with different published results reveals excellent quantitative agreement.",

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AU - Godoy, A.

AU - López-Villanueva, J. A.

AU - Jiménez-Tejada, J. A.

AU - Palma, A.

AU - Gámiz, F.

PY - 2001/3/1

Y1 - 2001/3/1

N2 - A new approach to calculate the subthreshold swing of short channel bulk and silicon-on-insulator metal oxide semiconductor field effect transistors is presented. The procedure utilizes a channel-potential expression appropriate for submicron dimensions. The final result is similar to that used for long channels except for a factor λ which represents the short channel effects. Comparison with different published results reveals excellent quantitative agreement.

AB - A new approach to calculate the subthreshold swing of short channel bulk and silicon-on-insulator metal oxide semiconductor field effect transistors is presented. The procedure utilizes a channel-potential expression appropriate for submicron dimensions. The final result is similar to that used for long channels except for a factor λ which represents the short channel effects. Comparison with different published results reveals excellent quantitative agreement.

UR - https://www.scopus.com/pages/publications/0035276041

U2 - 10.1016/S0038-1101(01)00060-0

DO - 10.1016/S0038-1101(01)00060-0

M3 - Article

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VL - 45

SP - 391

EP - 397

JO - Solid State Electronics

JF - Solid State Electronics

IS - 3

ER -

A simple subthreshold swing model for short channel MOSFETs

Abstract

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