An analytical expression for phonon-limited electron mobility in silicon-inversion layers

F. Gámiz; J. Banqueri; I. Melchor; J. E. Carceller; P. Cartujo; J. A. López-Villanueva

doi:10.1063/1.354550

An analytical expression for phonon-limited electron mobility in silicon-inversion layers

F. Gámiz
, J. Banqueri
, I. Melchor
, J. E. Carceller
, P. Cartujo
, J. A. López-Villanueva

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

A complete Monte Carlo study of phonon-limited electron mobility in (100) silicon-inversion layers has been carried out. It has been determined advantageous to consider more than three energy subbands for electron motion. First-order intervalley scattering has also been shown to play an important role in ohmic transport. The results of the Monte Carlo simulation can be fitted by a simple analytical expression that coincides with the phonon-limited mobility for the bulk in the zero transverse-electric-field limit.

Original language	English
Pages (from-to)	3289-3292
Number of pages	4
Journal	Journal of Applied Physics
Volume	74
Issue number	5
DOIs	https://doi.org/10.1063/1.354550
State	Published - 1 Dec 1993
Externally published	Yes

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AU - Gámiz, F.

AU - Banqueri, J.

AU - Melchor, I.

AU - Carceller, J. E.

AU - Cartujo, P.

AU - López-Villanueva, J. A.

PY - 1993/12/1

Y1 - 1993/12/1

N2 - A complete Monte Carlo study of phonon-limited electron mobility in (100) silicon-inversion layers has been carried out. It has been determined advantageous to consider more than three energy subbands for electron motion. First-order intervalley scattering has also been shown to play an important role in ohmic transport. The results of the Monte Carlo simulation can be fitted by a simple analytical expression that coincides with the phonon-limited mobility for the bulk in the zero transverse-electric-field limit.

AB - A complete Monte Carlo study of phonon-limited electron mobility in (100) silicon-inversion layers has been carried out. It has been determined advantageous to consider more than three energy subbands for electron motion. First-order intervalley scattering has also been shown to play an important role in ohmic transport. The results of the Monte Carlo simulation can be fitted by a simple analytical expression that coincides with the phonon-limited mobility for the bulk in the zero transverse-electric-field limit.

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JF - Journal of Applied Physics

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An analytical expression for phonon-limited electron mobility in silicon-inversion layers

Abstract

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