An analytical model for the electron velocity overshoot effects in strained-Si on Si/sub x/Ge/sub 1-x/ MOSFETs

J. B. Roldan; F. Gamiz; J. A. Lopez-Villanueva; J. E. Carceller

doi:10.1109/16.662819

An analytical model for the electron velocity overshoot effects in strained-Si on Si/sub x/Ge/sub 1-x/ MOSFETs

J. B. Roldan
, F. Gamiz
, J. A. Lopez-Villanueva
, J. E. Carceller

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We have quantitatively described the transconductance improvement that can be obtained in deep submicron strained-Si on Si/sub x/Ge/sub 1-x/ MOSFETs with respect to conventional Si ones due to velocity overshoot effects. We have done so making use of a Monte Carlo simulator and a recently developed transconductance analytical model.

Original language	English
Article number	662819
Pages (from-to)	993-995
Number of pages	3
Journal	IEEE Transactions on Electron Devices
Volume	45
Issue number	4
DOIs	https://doi.org/10.1109/16.662819
State	Published - 1 Dec 1998
Externally published	Yes

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10.1109/16.662819

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title = "An analytical model for the electron velocity overshoot effects in strained-Si on Si/sub x/Ge/sub 1-x/ MOSFETs",

abstract = "We have quantitatively described the transconductance improvement that can be obtained in deep submicron strained-Si on Si/sub x/Ge/sub 1-x/ MOSFETs with respect to conventional Si ones due to velocity overshoot effects. We have done so making use of a Monte Carlo simulator and a recently developed transconductance analytical model.",

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AU - Roldan, J. B.

AU - Gamiz, F.

AU - Lopez-Villanueva, J. A.

AU - Carceller, J. E.

PY - 1998/12/1

Y1 - 1998/12/1

N2 - We have quantitatively described the transconductance improvement that can be obtained in deep submicron strained-Si on Si/sub x/Ge/sub 1-x/ MOSFETs with respect to conventional Si ones due to velocity overshoot effects. We have done so making use of a Monte Carlo simulator and a recently developed transconductance analytical model.

AB - We have quantitatively described the transconductance improvement that can be obtained in deep submicron strained-Si on Si/sub x/Ge/sub 1-x/ MOSFETs with respect to conventional Si ones due to velocity overshoot effects. We have done so making use of a Monte Carlo simulator and a recently developed transconductance analytical model.

UR - https://www.scopus.com/pages/publications/0342705880

U2 - 10.1109/16.662819

DO - 10.1109/16.662819

M3 - Article

AN - SCOPUS:0342705880

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 4

M1 - 662819

ER -

An analytical model for the electron velocity overshoot effects in strained-Si on Si/sub x/Ge/sub 1-x/ MOSFETs

Abstract

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