Characterization of impurities in GaInNAs pn junctions from capacitance transient spectroscopy

J. A. Jiménez Tejada; M. J. Deen; P. Lara Bullejos; J. A. López Villanueva; F. M. Gómez-Campos; S. Rodríguez-Bolívar

doi:10.1109/SCED.2007.384012

Characterization of impurities in GaInNAs pn junctions from capacitance transient spectroscopy

J. A. Jiménez Tejada
, M. J. Deen
, P. Lara Bullejos
, J. A. López Villanueva
, F. M. Gómez-Campos
, S. Rodríguez-Bolívar

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Difficulties and their solutions found during the determination of parameters of impurities in thin GaInNAs solar cells, by means of spectroscopic capacitance measurements, are presented in this work. The parameters of impurities present in the GaInNAs pn junctions are determined by an iterative method, comparing experimental capacitance transients with calculated ones. The results disagree with the ones obtained by applying the classical expressions associated to the capacitance deep level transient spectroscopy (DLTS). The parameters of the centers are used to determine the hole diffusion lengths in the semiconductor. The agreement between the hole diffusion lengths obtained with our method and results found in literature means that DLTS must be used with care when determining recombination centers in thin pn junctions. An expression to be included in the DLTS technique, that incorporates these effects, is proposed.

Original language	English
Title of host publication	2007 Spanish Conference on Electron Devices, Proceedings
Pages	139-142
Number of pages	4
DOIs	https://doi.org/10.1109/SCED.2007.384012
State	Published - 15 Oct 2007
Externally published	Yes
Event	2007 Spanish Conference on Electron Devices, SCED - Madrid, Spain Duration: 31 Jan 2007 → 2 Feb 2007

Publication series

Name	2007 Spanish Conference on Electron Devices, Proceedings

Conference

Conference	2007 Spanish Conference on Electron Devices, SCED
Country/Territory	Spain
City	Madrid
Period	31/01/07 → 2/02/07

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

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10.1109/SCED.2007.384012

Cite this

Jiménez Tejada, J. A., Deen, M. J., Lara Bullejos, P., López Villanueva, J. A., Gómez-Campos, F. M., & Rodríguez-Bolívar, S. (2007). Characterization of impurities in GaInNAs pn junctions from capacitance transient spectroscopy. In 2007 Spanish Conference on Electron Devices, Proceedings (pp. 139-142). Article 4271188 (2007 Spanish Conference on Electron Devices, Proceedings). https://doi.org/10.1109/SCED.2007.384012

@inproceedings{23539f7ba3d74c388dcf3907f22de168,

title = "Characterization of impurities in GaInNAs pn junctions from capacitance transient spectroscopy",

abstract = "Difficulties and their solutions found during the determination of parameters of impurities in thin GaInNAs solar cells, by means of spectroscopic capacitance measurements, are presented in this work. The parameters of impurities present in the GaInNAs pn junctions are determined by an iterative method, comparing experimental capacitance transients with calculated ones. The results disagree with the ones obtained by applying the classical expressions associated to the capacitance deep level transient spectroscopy (DLTS). The parameters of the centers are used to determine the hole diffusion lengths in the semiconductor. The agreement between the hole diffusion lengths obtained with our method and results found in literature means that DLTS must be used with care when determining recombination centers in thin pn junctions. An expression to be included in the DLTS technique, that incorporates these effects, is proposed.",

keywords = "Capacitance measurement, Photovoltaic cells, Semiconductor impurities, Semiconductor junctions",

author = "\{Jim{\'e}nez Tejada\}, \{J. A.\} and Deen, \{M. J.\} and \{Lara Bullejos\}, P. and \{L{\'o}pez Villanueva\}, \{J. A.\} and G{\'o}mez-Campos, \{F. M.\} and S. Rodr{\'i}guez-Bol{\'i}var",

year = "2007",

month = oct,

day = "15",

doi = "10.1109/SCED.2007.384012",

language = "English",

isbn = "1424408687",

series = "2007 Spanish Conference on Electron Devices, Proceedings",

pages = "139--142",

booktitle = "2007 Spanish Conference on Electron Devices, Proceedings",

note = "2007 Spanish Conference on Electron Devices, SCED ; Conference date: 31-01-2007 Through 02-02-2007",

}

Jiménez Tejada, JA, Deen, MJ, Lara Bullejos, P, López Villanueva, JA, Gómez-Campos, FM & Rodríguez-Bolívar, S 2007, Characterization of impurities in GaInNAs pn junctions from capacitance transient spectroscopy. in 2007 Spanish Conference on Electron Devices, Proceedings., 4271188, 2007 Spanish Conference on Electron Devices, Proceedings, pp. 139-142, 2007 Spanish Conference on Electron Devices, SCED, Madrid, Spain, 31/01/07. https://doi.org/10.1109/SCED.2007.384012

Characterization of impurities in GaInNAs pn junctions from capacitance transient spectroscopy. / Jiménez Tejada, J. A.; Deen, M. J.; Lara Bullejos, P. et al.
2007 Spanish Conference on Electron Devices, Proceedings. 2007. p. 139-142 4271188 (2007 Spanish Conference on Electron Devices, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Characterization of impurities in GaInNAs pn junctions from capacitance transient spectroscopy

AU - Jiménez Tejada, J. A.

AU - Deen, M. J.

AU - Lara Bullejos, P.

AU - López Villanueva, J. A.

AU - Gómez-Campos, F. M.

AU - Rodríguez-Bolívar, S.

PY - 2007/10/15

Y1 - 2007/10/15

N2 - Difficulties and their solutions found during the determination of parameters of impurities in thin GaInNAs solar cells, by means of spectroscopic capacitance measurements, are presented in this work. The parameters of impurities present in the GaInNAs pn junctions are determined by an iterative method, comparing experimental capacitance transients with calculated ones. The results disagree with the ones obtained by applying the classical expressions associated to the capacitance deep level transient spectroscopy (DLTS). The parameters of the centers are used to determine the hole diffusion lengths in the semiconductor. The agreement between the hole diffusion lengths obtained with our method and results found in literature means that DLTS must be used with care when determining recombination centers in thin pn junctions. An expression to be included in the DLTS technique, that incorporates these effects, is proposed.

AB - Difficulties and their solutions found during the determination of parameters of impurities in thin GaInNAs solar cells, by means of spectroscopic capacitance measurements, are presented in this work. The parameters of impurities present in the GaInNAs pn junctions are determined by an iterative method, comparing experimental capacitance transients with calculated ones. The results disagree with the ones obtained by applying the classical expressions associated to the capacitance deep level transient spectroscopy (DLTS). The parameters of the centers are used to determine the hole diffusion lengths in the semiconductor. The agreement between the hole diffusion lengths obtained with our method and results found in literature means that DLTS must be used with care when determining recombination centers in thin pn junctions. An expression to be included in the DLTS technique, that incorporates these effects, is proposed.

KW - Capacitance measurement

KW - Photovoltaic cells

KW - Semiconductor impurities

KW - Semiconductor junctions

UR - https://www.scopus.com/pages/publications/35148848812

U2 - 10.1109/SCED.2007.384012

DO - 10.1109/SCED.2007.384012

M3 - Conference contribution

AN - SCOPUS:35148848812

SN - 1424408687

SN - 9781424408689

T3 - 2007 Spanish Conference on Electron Devices, Proceedings

SP - 139

EP - 142

BT - 2007 Spanish Conference on Electron Devices, Proceedings

T2 - 2007 Spanish Conference on Electron Devices, SCED

Y2 - 31 January 2007 through 2 February 2007

ER -

Jiménez Tejada JA, Deen MJ, Lara Bullejos P, López Villanueva JA, Gómez-Campos FM, Rodríguez-Bolívar S. Characterization of impurities in GaInNAs pn junctions from capacitance transient spectroscopy. In 2007 Spanish Conference on Electron Devices, Proceedings. 2007. p. 139-142. 4271188. (2007 Spanish Conference on Electron Devices, Proceedings). doi: 10.1109/SCED.2007.384012

Characterization of impurities in GaInNAs pn junctions from capacitance transient spectroscopy

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