Computational study of the strained-Si MOSFET: A possible alternative for the next century electronics industry

J. B. Roldán; F. Gámiz; J. A. López-Villanueva; J. E. Carceller; P. Cartujo

doi:10.1016/S0010-4655(99)00404-X

Computational study of the strained-Si MOSFET: A possible alternative for the next century electronics industry

J. B. Roldán, F. Gámiz, J. A. López-Villanueva, J. E. Carceller, P. Cartujo

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

We have studied in depth the performance of superficial and buried strained-Si/Si_xGe_1-x channel Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFET). To do so, we developed a two-dimensional simulator in which Poisson, Schrodinger and Boltzmann equations have been self-consistently solved. The dependences of the performance enhancement on the germanium mole fraction obtained in these devices both at low- and high-longitudinal electric fields in the channel are described. The simulator has been validated by reproducing experimental results.

Original language	English
Pages (from-to)	547-549
Number of pages	3
Journal	Computer Physics Communications
Volume	121
DOIs	https://doi.org/10.1016/S0010-4655(99)00404-X
State	Published - 1 Jan 1999
Externally published	Yes
Event	Proceedings of the 1998 Europhysics Conference on Computational Physics (CCP 1998) - Granada, Spain Duration: 2 Sep 1998 → 5 Sep 1998

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10.1016/S0010-4655(99)00404-X

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title = "Computational study of the strained-Si MOSFET: A possible alternative for the next century electronics industry",

abstract = "We have studied in depth the performance of superficial and buried strained-Si/SixGe1-x channel Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFET). To do so, we developed a two-dimensional simulator in which Poisson, Schrodinger and Boltzmann equations have been self-consistently solved. The dependences of the performance enhancement on the germanium mole fraction obtained in these devices both at low- and high-longitudinal electric fields in the channel are described. The simulator has been validated by reproducing experimental results.",

author = "Rold{\'a}n, \{J. B.\} and F. G{\'a}miz and L{\'o}pez-Villanueva, \{J. A.\} and Carceller, \{J. E.\} and P. Cartujo",

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doi = "10.1016/S0010-4655(99)00404-X",

language = "English",

volume = "121",

pages = "547--549",

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note = "Proceedings of the 1998 Europhysics Conference on Computational Physics (CCP 1998) ; Conference date: 02-09-1998 Through 05-09-1998",

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TY - JOUR

T1 - Computational study of the strained-Si MOSFET

T2 - Proceedings of the 1998 Europhysics Conference on Computational Physics (CCP 1998)

AU - Roldán, J. B.

AU - Gámiz, F.

AU - López-Villanueva, J. A.

AU - Carceller, J. E.

AU - Cartujo, P.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - We have studied in depth the performance of superficial and buried strained-Si/SixGe1-x channel Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFET). To do so, we developed a two-dimensional simulator in which Poisson, Schrodinger and Boltzmann equations have been self-consistently solved. The dependences of the performance enhancement on the germanium mole fraction obtained in these devices both at low- and high-longitudinal electric fields in the channel are described. The simulator has been validated by reproducing experimental results.

AB - We have studied in depth the performance of superficial and buried strained-Si/SixGe1-x channel Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFET). To do so, we developed a two-dimensional simulator in which Poisson, Schrodinger and Boltzmann equations have been self-consistently solved. The dependences of the performance enhancement on the germanium mole fraction obtained in these devices both at low- and high-longitudinal electric fields in the channel are described. The simulator has been validated by reproducing experimental results.

UR - https://www.scopus.com/pages/publications/17644429045

U2 - 10.1016/S0010-4655(99)00404-X

DO - 10.1016/S0010-4655(99)00404-X

M3 - Conference article

AN - SCOPUS:17644429045

SN - 0010-4655

VL - 121

SP - 547

EP - 549

JO - Computer Physics Communications

JF - Computer Physics Communications

Y2 - 2 September 1998 through 5 September 1998

ER -

Computational study of the strained-Si MOSFET: A possible alternative for the next century electronics industry

Abstract

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