Deep submicrometer SOI MOSFET drain current model including series resistance, self-heating and velocity overshoot effects

J. B. Roldán; F. Gámiz; J. A. López-Villanueva; P. Cartujo-Cassinello

doi:10.1109/55.841308

Deep submicrometer SOI MOSFET drain current model including series resistance, self-heating and velocity overshoot effects

J. B. Roldán
, F. Gámiz
, J. A. López-Villanueva
, P. Cartujo-Cassinello

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

We have developed a new analytical ultrashort channel SOI MOSFET for circuit simulation where the effects of series resistance, self-heating and velocity overshoot are included. We have reproduced experimental measurements validating our model. Its simplicity allowed us to study the contribution of each effect separately in an easy way.

Original language	English
Pages (from-to)	239-241
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	21
Issue number	5
DOIs	https://doi.org/10.1109/55.841308
State	Published - 1 May 2000
Externally published	Yes

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title = "Deep submicrometer SOI MOSFET drain current model including series resistance, self-heating and velocity overshoot effects",

abstract = "We have developed a new analytical ultrashort channel SOI MOSFET for circuit simulation where the effects of series resistance, self-heating and velocity overshoot are included. We have reproduced experimental measurements validating our model. Its simplicity allowed us to study the contribution of each effect separately in an easy way.",

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AU - Roldán, J. B.

AU - Gámiz, F.

AU - López-Villanueva, J. A.

AU - Cartujo-Cassinello, P.

PY - 2000/5/1

Y1 - 2000/5/1

N2 - We have developed a new analytical ultrashort channel SOI MOSFET for circuit simulation where the effects of series resistance, self-heating and velocity overshoot are included. We have reproduced experimental measurements validating our model. Its simplicity allowed us to study the contribution of each effect separately in an easy way.

AB - We have developed a new analytical ultrashort channel SOI MOSFET for circuit simulation where the effects of series resistance, self-heating and velocity overshoot are included. We have reproduced experimental measurements validating our model. Its simplicity allowed us to study the contribution of each effect separately in an easy way.

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DO - 10.1109/55.841308

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JO - IEEE Electron Device Letters

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IS - 5

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Deep submicrometer SOI MOSFET drain current model including series resistance, self-heating and velocity overshoot effects

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