Development of a method for determining the dependence of the electron mobility on the longitudinal-electric field in MOSFETs

J. B. Roldán; F. Gámiz; J. A. López-Villanueva

doi:10.1155/1998/52301

Development of a method for determining the dependence of the electron mobility on the longitudinal-electric field in MOSFETs

J. B. Roldán
, F. Gámiz
, J. A. López-Villanueva

Research output: Contribution to journal › Article › peer-review

Abstract

A new experimental method for determining the dependence of the electron mobility on the longitudinal-electric field has been developed. The development, validation and explanation of this new method has been carefully carried out. We have applied this procedure to standard submicron MOSFETs and after having obtained the mobility dependence on both the transverse- and longitudinal-electric fields we reproduced the experimental output curves. The saturation velocity has also been calculated using the mobility curves obtained by this new method.

Original language	English
Pages (from-to)	261-264
Number of pages	4
Journal	VLSI Design
Volume	8
Issue number	1-4
DOIs	https://doi.org/10.1155/1998/52301
State	Published - 1 Jan 1998
Externally published	Yes

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10.1155/1998/52301

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abstract = "A new experimental method for determining the dependence of the electron mobility on the longitudinal-electric field has been developed. The development, validation and explanation of this new method has been carefully carried out. We have applied this procedure to standard submicron MOSFETs and after having obtained the mobility dependence on both the transverse- and longitudinal-electric fields we reproduced the experimental output curves. The saturation velocity has also been calculated using the mobility curves obtained by this new method.",

keywords = "Driftdiffusion simulation, Electron mobility, Longitudinal-electric field, Output curves, Saturation velocity",

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AU - Gámiz, F.

AU - López-Villanueva, J. A.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - A new experimental method for determining the dependence of the electron mobility on the longitudinal-electric field has been developed. The development, validation and explanation of this new method has been carefully carried out. We have applied this procedure to standard submicron MOSFETs and after having obtained the mobility dependence on both the transverse- and longitudinal-electric fields we reproduced the experimental output curves. The saturation velocity has also been calculated using the mobility curves obtained by this new method.

AB - A new experimental method for determining the dependence of the electron mobility on the longitudinal-electric field has been developed. The development, validation and explanation of this new method has been carefully carried out. We have applied this procedure to standard submicron MOSFETs and after having obtained the mobility dependence on both the transverse- and longitudinal-electric fields we reproduced the experimental output curves. The saturation velocity has also been calculated using the mobility curves obtained by this new method.

KW - Driftdiffusion simulation

KW - Electron mobility

KW - Longitudinal-electric field

KW - Output curves

KW - Saturation velocity

UR - https://www.scopus.com/pages/publications/0032315720

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DO - 10.1155/1998/52301

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SP - 261

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JO - VLSI Design

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ER -

Development of a method for determining the dependence of the electron mobility on the longitudinal-electric field in MOSFETs

Abstract

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