Direct and trap-assisted elastic tunneling through ultrathin gate oxides

F. Jiménez-Molinos; F. Gámiz; A. Palma; P. Cartujo; J. A. López-Villanueva

doi:10.1063/1.1461062

Direct and trap-assisted elastic tunneling through ultrathin gate oxides

F. Jiménez-Molinos
, F. Gámiz
, A. Palma
, P. Cartujo
, J. A. López-Villanueva

Research output: Contribution to journal › Article › peer-review

91 Scopus citations

Abstract

The direct and assisted-by-trap elastic tunnel current in metal-oxide-semiconductor capacitors with ultrathin gate oxide (1.5-3.6 nm) has been studied. Bardeen's method has been adapted to obtain the assisted tunnel current, in addition to the direct tunnel current. The dependence of the assisted current on the trap distribution in energy has also been analyzed. This allows us to obtain the trap distribution in energy from experimental current curves. Finally, we have analyzed the role of the image force, the inclusion of which can avoid a barrier height dependence on the oxide thickness.

Original language	English
Pages (from-to)	5116-5124
Number of pages	9
Journal	Journal of Applied Physics
Volume	91
Issue number	8
DOIs	https://doi.org/10.1063/1.1461062
State	Published - 15 Apr 2002
Externally published	Yes

Access to Document

10.1063/1.1461062

Cite this

@article{8a24a4d762f04f74bbf0cc8f08bb0505,

title = "Direct and trap-assisted elastic tunneling through ultrathin gate oxides",

abstract = "The direct and assisted-by-trap elastic tunnel current in metal-oxide-semiconductor capacitors with ultrathin gate oxide (1.5-3.6 nm) has been studied. Bardeen's method has been adapted to obtain the assisted tunnel current, in addition to the direct tunnel current. The dependence of the assisted current on the trap distribution in energy has also been analyzed. This allows us to obtain the trap distribution in energy from experimental current curves. Finally, we have analyzed the role of the image force, the inclusion of which can avoid a barrier height dependence on the oxide thickness.",

author = "F. Jim{\'e}nez-Molinos and F. G{\'a}miz and A. Palma and P. Cartujo and L{\'o}pez-Villanueva, \{J. A.\}",

year = "2002",

month = apr,

day = "15",

doi = "10.1063/1.1461062",

language = "English",

volume = "91",

pages = "5116--5124",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Direct and trap-assisted elastic tunneling through ultrathin gate oxides

AU - Jiménez-Molinos, F.

AU - Gámiz, F.

AU - Palma, A.

AU - Cartujo, P.

AU - López-Villanueva, J. A.

PY - 2002/4/15

Y1 - 2002/4/15

N2 - The direct and assisted-by-trap elastic tunnel current in metal-oxide-semiconductor capacitors with ultrathin gate oxide (1.5-3.6 nm) has been studied. Bardeen's method has been adapted to obtain the assisted tunnel current, in addition to the direct tunnel current. The dependence of the assisted current on the trap distribution in energy has also been analyzed. This allows us to obtain the trap distribution in energy from experimental current curves. Finally, we have analyzed the role of the image force, the inclusion of which can avoid a barrier height dependence on the oxide thickness.

AB - The direct and assisted-by-trap elastic tunnel current in metal-oxide-semiconductor capacitors with ultrathin gate oxide (1.5-3.6 nm) has been studied. Bardeen's method has been adapted to obtain the assisted tunnel current, in addition to the direct tunnel current. The dependence of the assisted current on the trap distribution in energy has also been analyzed. This allows us to obtain the trap distribution in energy from experimental current curves. Finally, we have analyzed the role of the image force, the inclusion of which can avoid a barrier height dependence on the oxide thickness.

UR - https://www.scopus.com/pages/publications/84861453763

U2 - 10.1063/1.1461062

DO - 10.1063/1.1461062

M3 - Article

AN - SCOPUS:84861453763

SN - 0021-8979

VL - 91

SP - 5116

EP - 5124

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -

Direct and trap-assisted elastic tunneling through ultrathin gate oxides

Abstract

Access to Document

Other files and links

Fingerprint

Cite this