Effect of traps in the performance of four gate transistors

A. Luque Rodriguez; J. A.Jimenez Tejada; A. Godoy; J. A.López Villanueva; F. M. Gómez-Campos; S. Rodríguez-Bolivar

doi:10.1109/SCED.2009.4800448

Effect of traps in the performance of four gate transistors

A. Luque Rodriguez
, J. A.Jimenez Tejada
, A. Godoy
, J. A.López Villanueva
, F. M. Gómez-Campos
, S. Rodríguez-Bolivar

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

In this work, a study of traps located in the bulk and the Si-SiO ₂ interfaces of four gate transistors (G⁴-FETs), and their effect in the performance of these transistors, is presented. Different kinds of low frequency noise spectra measured at different voltages applied to the gates show that traps in the bulk and traps at the interfaces are the origin of such different spectra. We propose a model to evaluate low frequency noise produced in the bulk and surfaces of the device. This model is incorporated in a 2D simulator that confirms the experimental trends. It also allows us to separate the contribution of both sources and study the effects of different kinds of bulk traps on the low frequency noise.

Original language	English
Title of host publication	Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09
Pages	132-135
Number of pages	4
DOIs	https://doi.org/10.1109/SCED.2009.4800448
State	Published - 24 Apr 2009
Externally published	Yes
Event	2009 Spanish Conference on Electron Devices, CDE'09 - Santiago de Compostela, Spain Duration: 11 Feb 2009 → 13 Feb 2009

Publication series

Name	Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

Conference

Conference	2009 Spanish Conference on Electron Devices, CDE'09
Country/Territory	Spain
City	Santiago de Compostela
Period	11/02/09 → 13/02/09

Access to Document

10.1109/SCED.2009.4800448

Cite this

Rodriguez, A. L., Tejada, J. A. J., Godoy, A., Villanueva, J. A. L., Gómez-Campos, F. M., & Rodríguez-Bolivar, S. (2009). Effect of traps in the performance of four gate transistors. In Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09 (pp. 132-135). Article 4800448 (Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09). https://doi.org/10.1109/SCED.2009.4800448

@inproceedings{beec1e4834b14058a2d89eb7f9629c77,

title = "Effect of traps in the performance of four gate transistors",

abstract = "In this work, a study of traps located in the bulk and the Si-SiO 2 interfaces of four gate transistors (G4-FETs), and their effect in the performance of these transistors, is presented. Different kinds of low frequency noise spectra measured at different voltages applied to the gates show that traps in the bulk and traps at the interfaces are the origin of such different spectra. We propose a model to evaluate low frequency noise produced in the bulk and surfaces of the device. This model is incorporated in a 2D simulator that confirms the experimental trends. It also allows us to separate the contribution of both sources and study the effects of different kinds of bulk traps on the low frequency noise.",

author = "Rodriguez, \{A. Luque\} and Tejada, \{J. A.Jimenez\} and A. Godoy and Villanueva, \{J. A.L{\'o}pez\} and G{\'o}mez-Campos, \{F. M.\} and S. Rodr{\'i}guez-Bolivar",

year = "2009",

month = apr,

day = "24",

doi = "10.1109/SCED.2009.4800448",

language = "English",

isbn = "9781424428397",

series = "Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09",

pages = "132--135",

booktitle = "Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09",

note = "2009 Spanish Conference on Electron Devices, CDE'09 ; Conference date: 11-02-2009 Through 13-02-2009",

}

Rodriguez, AL, Tejada, JAJ, Godoy, A, Villanueva, JAL, Gómez-Campos, FM & Rodríguez-Bolivar, S 2009, Effect of traps in the performance of four gate transistors. in Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09., 4800448, Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09, pp. 132-135, 2009 Spanish Conference on Electron Devices, CDE'09, Santiago de Compostela, Spain, 11/02/09. https://doi.org/10.1109/SCED.2009.4800448

Effect of traps in the performance of four gate transistors. / Rodriguez, A. Luque; Tejada, J. A.Jimenez; Godoy, A. et al.
Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09. 2009. p. 132-135 4800448 (Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Effect of traps in the performance of four gate transistors

AU - Rodriguez, A. Luque

AU - Tejada, J. A.Jimenez

AU - Godoy, A.

AU - Villanueva, J. A.López

AU - Gómez-Campos, F. M.

AU - Rodríguez-Bolivar, S.

PY - 2009/4/24

Y1 - 2009/4/24

N2 - In this work, a study of traps located in the bulk and the Si-SiO 2 interfaces of four gate transistors (G4-FETs), and their effect in the performance of these transistors, is presented. Different kinds of low frequency noise spectra measured at different voltages applied to the gates show that traps in the bulk and traps at the interfaces are the origin of such different spectra. We propose a model to evaluate low frequency noise produced in the bulk and surfaces of the device. This model is incorporated in a 2D simulator that confirms the experimental trends. It also allows us to separate the contribution of both sources and study the effects of different kinds of bulk traps on the low frequency noise.

AB - In this work, a study of traps located in the bulk and the Si-SiO 2 interfaces of four gate transistors (G4-FETs), and their effect in the performance of these transistors, is presented. Different kinds of low frequency noise spectra measured at different voltages applied to the gates show that traps in the bulk and traps at the interfaces are the origin of such different spectra. We propose a model to evaluate low frequency noise produced in the bulk and surfaces of the device. This model is incorporated in a 2D simulator that confirms the experimental trends. It also allows us to separate the contribution of both sources and study the effects of different kinds of bulk traps on the low frequency noise.

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SN - 9781424428397

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BT - Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

T2 - 2009 Spanish Conference on Electron Devices, CDE'09

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ER -

Effect of traps in the performance of four gate transistors

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