Effects of bulk-impurity and interface-charge on the electron mobility in MOSFETs

F. Gámiz; J. Banqueri; J. E. Carceller; J. A. López-Villanueva

doi:10.1016/0038-1101(94)00129-4

Effects of bulk-impurity and interface-charge on the electron mobility in MOSFETs

F. Gámiz
, J. Banqueri
, J. E. Carceller
, J. A. López-Villanueva

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The effects of interface and bulk-impurity charges on electron mobility in a MOSFET are compared by using Monte Carlo simulation. It has been shown that the increase in bulk-impurity concentration causes a reduction of mobility at low electric fields, in two ways: (i) an increase of Coulomb interaction produced by an increase of charges in the bulk; and (ii) the reduction of screening caused by the loss of charge in inversion layer. Except for high-doping levels, the latter is the most significant cause of mobility degradation.

Original language	English
Pages (from-to)	611-614
Number of pages	4
Journal	Solid State Electronics
Volume	38
Issue number	3
DOIs	https://doi.org/10.1016/0038-1101(94)00129-4
State	Published - 1 Jan 1995
Externally published	Yes

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title = "Effects of bulk-impurity and interface-charge on the electron mobility in MOSFETs",

abstract = "The effects of interface and bulk-impurity charges on electron mobility in a MOSFET are compared by using Monte Carlo simulation. It has been shown that the increase in bulk-impurity concentration causes a reduction of mobility at low electric fields, in two ways: (i) an increase of Coulomb interaction produced by an increase of charges in the bulk; and (ii) the reduction of screening caused by the loss of charge in inversion layer. Except for high-doping levels, the latter is the most significant cause of mobility degradation.",

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AU - Gámiz, F.

AU - Banqueri, J.

AU - Carceller, J. E.

AU - López-Villanueva, J. A.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - The effects of interface and bulk-impurity charges on electron mobility in a MOSFET are compared by using Monte Carlo simulation. It has been shown that the increase in bulk-impurity concentration causes a reduction of mobility at low electric fields, in two ways: (i) an increase of Coulomb interaction produced by an increase of charges in the bulk; and (ii) the reduction of screening caused by the loss of charge in inversion layer. Except for high-doping levels, the latter is the most significant cause of mobility degradation.

AB - The effects of interface and bulk-impurity charges on electron mobility in a MOSFET are compared by using Monte Carlo simulation. It has been shown that the increase in bulk-impurity concentration causes a reduction of mobility at low electric fields, in two ways: (i) an increase of Coulomb interaction produced by an increase of charges in the bulk; and (ii) the reduction of screening caused by the loss of charge in inversion layer. Except for high-doping levels, the latter is the most significant cause of mobility degradation.

UR - https://www.scopus.com/pages/publications/0029276282

U2 - 10.1016/0038-1101(94)00129-4

DO - 10.1016/0038-1101(94)00129-4

M3 - Article

AN - SCOPUS:0029276282

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VL - 38

SP - 611

EP - 614

JO - Solid State Electronics

JF - Solid State Electronics

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ER -

Effects of bulk-impurity and interface-charge on the electron mobility in MOSFETs

Abstract

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