Effects of oxide-charge space correlation on electron mobility in inversion layers

F. Gamiz; I. Melchor; A. Palma; P. Cartujo; J. A. Lopez-Villanueva

doi:10.1088/0268-1242/9/5/015

Effects of oxide-charge space correlation on electron mobility in inversion layers

F. Gamiz
, I. Melchor
, A. Palma
, P. Cartujo
, J. A. Lopez-Villanueva

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

The effect of the space correlation of oxide charges on the effective mobility of electrons in the channel of an NMOS transistor has been studied. Mobility has been obtained by a single-electron Monte Carlo simulation in which space correlation has been included simultaneously with other effects such as screening of point charges by mobile carriers, image charges, and phonon and surface-roughness scattering. Results have been obtained by assuming different degrees of space correlation for several temperature values and diverse oxide-charge concentrations and positions. The charged-centre space correlation is shown to have a noticeable effect on the electron mobility.

Original language	English
Article number	015
Pages (from-to)	1102-1107
Number of pages	6
Journal	Semiconductor Science and Technology
Volume	9
Issue number	5
DOIs	https://doi.org/10.1088/0268-1242/9/5/015
State	Published - 1 Dec 1994
Externally published	Yes

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title = "Effects of oxide-charge space correlation on electron mobility in inversion layers",

abstract = "The effect of the space correlation of oxide charges on the effective mobility of electrons in the channel of an NMOS transistor has been studied. Mobility has been obtained by a single-electron Monte Carlo simulation in which space correlation has been included simultaneously with other effects such as screening of point charges by mobile carriers, image charges, and phonon and surface-roughness scattering. Results have been obtained by assuming different degrees of space correlation for several temperature values and diverse oxide-charge concentrations and positions. The charged-centre space correlation is shown to have a noticeable effect on the electron mobility.",

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AU - Gamiz, F.

AU - Melchor, I.

AU - Palma, A.

AU - Cartujo, P.

AU - Lopez-Villanueva, J. A.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - The effect of the space correlation of oxide charges on the effective mobility of electrons in the channel of an NMOS transistor has been studied. Mobility has been obtained by a single-electron Monte Carlo simulation in which space correlation has been included simultaneously with other effects such as screening of point charges by mobile carriers, image charges, and phonon and surface-roughness scattering. Results have been obtained by assuming different degrees of space correlation for several temperature values and diverse oxide-charge concentrations and positions. The charged-centre space correlation is shown to have a noticeable effect on the electron mobility.

AB - The effect of the space correlation of oxide charges on the effective mobility of electrons in the channel of an NMOS transistor has been studied. Mobility has been obtained by a single-electron Monte Carlo simulation in which space correlation has been included simultaneously with other effects such as screening of point charges by mobile carriers, image charges, and phonon and surface-roughness scattering. Results have been obtained by assuming different degrees of space correlation for several temperature values and diverse oxide-charge concentrations and positions. The charged-centre space correlation is shown to have a noticeable effect on the electron mobility.

UR - https://www.scopus.com/pages/publications/0028424994

U2 - 10.1088/0268-1242/9/5/015

DO - 10.1088/0268-1242/9/5/015

M3 - Article

AN - SCOPUS:0028424994

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EP - 1107

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 5

M1 - 015

ER -

Effects of oxide-charge space correlation on electron mobility in inversion layers

Abstract

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