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Effects of oxygen-related traps in silicon on the generation-recombination noise

  • J. A.Jiménez Tejada
  • , J. A.López Villanueva
  • , A. Godoy
  • , J. E. Carceller
  • , F. M. Gómez-Campos
  • , S. Rodríguez-Bolívar

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

This work shows the effects of oxygen related traps in silicon on the generation-recombination noise and presents a procedure to determine their capture cross-sections and densities. It compares the current noise spectral density measured in p - n junctions fabricated on Czochralski-grown silicon (Cz-Si) with an analytical expression proposed by us. In those systems where two or more levels are present in the bandgap additional electrical measurements are necessary in order to discern which level is the origin of the noise. Multiple oxygen related traps can be found in the literature. A thorough study of their associated levels, and of different techniques employed to characterize them is made in this paper. We have found that one of these levels behaves both as a minority or majority trap, depending on the temperature. The parameters proposed for this level can link different results found in the literature.

Original languageEnglish
Title of host publicationNOISE AND FLUCTUATIONS
Subtitle of host publication18th International Conference on Noise and Fluctuations - ICNF 2005
Pages717-720
Number of pages4
DOIs
StatePublished - 25 Aug 2005
Externally publishedYes
EventNOISE AND FLUCTUATIONS: 18th International Conference on Noise and Fluctuations - ICNF 2005 - Salamanca, Spain
Duration: 19 Sep 200523 Sep 2005

Publication series

NameAIP Conference Proceedings
Volume780
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

ConferenceNOISE AND FLUCTUATIONS: 18th International Conference on Noise and Fluctuations - ICNF 2005
Country/TerritorySpain
CitySalamanca
Period19/09/0523/09/05

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