Electric field dependence of the electron capture cross section of neutral traps in SiO2

A. Palma; J. A. López-Villanueva; J. E. Carceller

doi:10.1149/1.1837072

Electric field dependence of the electron capture cross section of neutral traps in SiO₂

A. Palma
, J. A. López-Villanueva
, J. E. Carceller

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

The electron capture cross section of deep neutral centers has been numerically calculated as a function of the applied electric field in SiO_2. The inclusion of multiphonon capture probability together with the rest of the phonon mechanisms has been possible due to a Monte Carlo treatment. This numerical procedure has allowed a better understanding of the capture process at the microscopic level, and provides a suitable method for checking multiphonon theory in insulators.

Original language	English
Pages (from-to)	2687-2690
Number of pages	4
Journal	Journal of the Electrochemical Society
Volume	143
Issue number	8
DOIs	https://doi.org/10.1149/1.1837072
State	Published - 1 Jan 1996
Externally published	Yes

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10.1149/1.1837072

Cite this

@article{a5cfe2bbde3a45cf90061b01521571a4,

title = "Electric field dependence of the electron capture cross section of neutral traps in SiO2",

abstract = "The electron capture cross section of deep neutral centers has been numerically calculated as a function of the applied electric field in SiO2. The inclusion of multiphonon capture probability together with the rest of the phonon mechanisms has been possible due to a Monte Carlo treatment. This numerical procedure has allowed a better understanding of the capture process at the microscopic level, and provides a suitable method for checking multiphonon theory in insulators.",

author = "A. Palma and L{\'o}pez-Villanueva, \{J. A.\} and Carceller, \{J. E.\}",

year = "1996",

month = jan,

day = "1",

doi = "10.1149/1.1837072",

language = "English",

volume = "143",

pages = "2687--2690",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Electric field dependence of the electron capture cross section of neutral traps in SiO2

AU - Palma, A.

AU - López-Villanueva, J. A.

AU - Carceller, J. E.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - The electron capture cross section of deep neutral centers has been numerically calculated as a function of the applied electric field in SiO2. The inclusion of multiphonon capture probability together with the rest of the phonon mechanisms has been possible due to a Monte Carlo treatment. This numerical procedure has allowed a better understanding of the capture process at the microscopic level, and provides a suitable method for checking multiphonon theory in insulators.

AB - The electron capture cross section of deep neutral centers has been numerically calculated as a function of the applied electric field in SiO2. The inclusion of multiphonon capture probability together with the rest of the phonon mechanisms has been possible due to a Monte Carlo treatment. This numerical procedure has allowed a better understanding of the capture process at the microscopic level, and provides a suitable method for checking multiphonon theory in insulators.

UR - https://www.scopus.com/pages/publications/0030212415

U2 - 10.1149/1.1837072

DO - 10.1149/1.1837072

M3 - Article

AN - SCOPUS:0030212415

SN - 0013-4651

VL - 143

SP - 2687

EP - 2690

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 8

ER -

Electric field dependence of the electron capture cross section of neutral traps in SiO₂

Abstract

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