Electron transport in silicon-on-insulator devices

F. Gámiz; J. B. Roldán; J. A. López-Villanueva; P. Cartujo-Cassinello; J. E. Carceller; P. Cartujo; F. Jiménez-Molinos

doi:10.1016/S0038-1101(01)00076-4

Electron transport in silicon-on-insulator devices

F. Gámiz
, J. B. Roldán
, J. A. López-Villanueva
, P. Cartujo-Cassinello
, J. E. Carceller
, P. Cartujo
, F. Jiménez-Molinos

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The electron transport in single-gate and double-gate silicon-on-insulator devices is studied as a function of the transverse electric field and the silicon layer thickness, with particular attention on the evaluation of stationary drift velocity and low-field mobility at room temperature. The effects of phonon scattering, surface roughness scattering, and Coulomb scattering were taken into account. The role played by each scattering mechanism was carefully analyzed as a function of silicon slab thickness and transverse effective field for both devices. It was demonstrated that the contributions of surface scattering mechanisms are by no means insignificant.

Original language	English
Pages (from-to)	613-620
Number of pages	8
Journal	Solid State Electronics
Volume	45
Issue number	4
DOIs	https://doi.org/10.1016/S0038-1101(01)00076-4
State	Published - 1 May 2001
Externally published	Yes

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title = "Electron transport in silicon-on-insulator devices",

abstract = "The electron transport in single-gate and double-gate silicon-on-insulator devices is studied as a function of the transverse electric field and the silicon layer thickness, with particular attention on the evaluation of stationary drift velocity and low-field mobility at room temperature. The effects of phonon scattering, surface roughness scattering, and Coulomb scattering were taken into account. The role played by each scattering mechanism was carefully analyzed as a function of silicon slab thickness and transverse effective field for both devices. It was demonstrated that the contributions of surface scattering mechanisms are by no means insignificant.",

author = "F. G{\'a}miz and Rold{\'a}n, \{J. B.\} and L{\'o}pez-Villanueva, \{J. A.\} and P. Cartujo-Cassinello and Carceller, \{J. E.\} and P. Cartujo and F. Jim{\'e}nez-Molinos",

year = "2001",

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doi = "10.1016/S0038-1101(01)00076-4",

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T1 - Electron transport in silicon-on-insulator devices

AU - Gámiz, F.

AU - Roldán, J. B.

AU - López-Villanueva, J. A.

AU - Cartujo-Cassinello, P.

AU - Carceller, J. E.

AU - Cartujo, P.

AU - Jiménez-Molinos, F.

PY - 2001/5/1

Y1 - 2001/5/1

N2 - The electron transport in single-gate and double-gate silicon-on-insulator devices is studied as a function of the transverse electric field and the silicon layer thickness, with particular attention on the evaluation of stationary drift velocity and low-field mobility at room temperature. The effects of phonon scattering, surface roughness scattering, and Coulomb scattering were taken into account. The role played by each scattering mechanism was carefully analyzed as a function of silicon slab thickness and transverse effective field for both devices. It was demonstrated that the contributions of surface scattering mechanisms are by no means insignificant.

AB - The electron transport in single-gate and double-gate silicon-on-insulator devices is studied as a function of the transverse electric field and the silicon layer thickness, with particular attention on the evaluation of stationary drift velocity and low-field mobility at room temperature. The effects of phonon scattering, surface roughness scattering, and Coulomb scattering were taken into account. The role played by each scattering mechanism was carefully analyzed as a function of silicon slab thickness and transverse effective field for both devices. It was demonstrated that the contributions of surface scattering mechanisms are by no means insignificant.

UR - https://www.scopus.com/pages/publications/0035333697

U2 - 10.1016/S0038-1101(01)00076-4

DO - 10.1016/S0038-1101(01)00076-4

M3 - Article

AN - SCOPUS:0035333697

SN - 0038-1101

VL - 45

SP - 613

EP - 620

JO - Solid State Electronics

JF - Solid State Electronics

IS - 4

ER -

Electron transport in silicon-on-insulator devices

Abstract

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