Electron trapping and detrapping in near-interfacial traps during Fowler-Nordheim tunneling injection at 77 K

J. A. López-Villanueva; J. E. Carceller; F. Gámiz; J. Banqueri

doi:10.1016/0167-9317(95)00066-H

Electron trapping and detrapping in near-interfacial traps during Fowler-Nordheim tunneling injection at 77 K

J. A. López-Villanueva
, J. E. Carceller
, F. Gámiz
, J. Banqueri

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Results of injection experiments at 77 K, alternated with ascensions to room temperature are reported. Two trapping behaviours have been identified, with a relationship between them being noted. Both donor and acceptor interface traps have also been observed to be created. Results can be interpreted with a model based on oxide traps with energies above the silicon conduction band.

Original language	English
Pages (from-to)	317-320
Number of pages	4
Journal	Microelectronic Engineering
Volume	28
Issue number	1-4
DOIs	https://doi.org/10.1016/0167-9317(95)00066-H
State	Published - 1 Jan 1995
Externally published	Yes

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10.1016/0167-9317(95)00066-H

Cite this

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title = "Electron trapping and detrapping in near-interfacial traps during Fowler-Nordheim tunneling injection at 77 K",

abstract = "Results of injection experiments at 77 K, alternated with ascensions to room temperature are reported. Two trapping behaviours have been identified, with a relationship between them being noted. Both donor and acceptor interface traps have also been observed to be created. Results can be interpreted with a model based on oxide traps with energies above the silicon conduction band.",

author = "L{\'o}pez-Villanueva, \{J. A.\} and Carceller, \{J. E.\} and F. G{\'a}miz and J. Banqueri",

year = "1995",

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doi = "10.1016/0167-9317(95)00066-H",

language = "English",

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T1 - Electron trapping and detrapping in near-interfacial traps during Fowler-Nordheim tunneling injection at 77 K

AU - López-Villanueva, J. A.

AU - Carceller, J. E.

AU - Gámiz, F.

AU - Banqueri, J.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - Results of injection experiments at 77 K, alternated with ascensions to room temperature are reported. Two trapping behaviours have been identified, with a relationship between them being noted. Both donor and acceptor interface traps have also been observed to be created. Results can be interpreted with a model based on oxide traps with energies above the silicon conduction band.

AB - Results of injection experiments at 77 K, alternated with ascensions to room temperature are reported. Two trapping behaviours have been identified, with a relationship between them being noted. Both donor and acceptor interface traps have also been observed to be created. Results can be interpreted with a model based on oxide traps with energies above the silicon conduction band.

UR - https://www.scopus.com/pages/publications/0029323837

U2 - 10.1016/0167-9317(95)00066-H

DO - 10.1016/0167-9317(95)00066-H

M3 - Article

AN - SCOPUS:0029323837

SN - 0167-9317

VL - 28

SP - 317

EP - 320

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1-4

ER -

Electron trapping and detrapping in near-interfacial traps during Fowler-Nordheim tunneling injection at 77 K

Abstract

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