Electron velocity overshoot in strained Si/Si1-xGexMOSFETs

F. Gamiz; J. A. Lopez-Villanueva; J. B. Roldan; J. E. Carceller; P. Cartujo

Electron velocity overshoot in strained Si/Si_1-xGe_xMOSFETs

F. Gamiz
, J. A. Lopez-Villanueva
, J. B. Roldan
, J. E. Carceller
, P. Cartujo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Electron transport properties of strained-Si on relaxed Si_1-xGe_xchannel MOSFETs have been studied using a Monte Carlo simulator. The steady-and non-steady-state high-longitudinal field transport regimes have been described in detail. Electron-velocity-overshoot effects are also studied in deep-submicron strained-Si MOSFETs, where they show an improvement over the performance of their normal silicon counterparts.

Original language	English
Title of host publication	ESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference
Editors	Massimo Rudan, Giorgio Baccarani
Publisher	IEEE Computer Society
Pages	413-414
Number of pages	2
ISBN (Electronic)	286332196X
ISBN (Print)	9782863321966
State	Published - 1 Jan 1996
Externally published	Yes
Event	26th European Solid State Device Research Conference, ESSDERC 1996 - Bologna, Italy Duration: 9 Sep 1996 → 11 Sep 1996

Publication series

Name	European Solid-State Device Research Conference
ISSN (Print)	1930-8876

Conference

Conference	26th European Solid State Device Research Conference, ESSDERC 1996
Country/Territory	Italy
City	Bologna
Period	9/09/96 → 11/09/96

Cite this

Gamiz, F., Lopez-Villanueva, J. A., Roldan, J. B., Carceller, J. E., & Cartujo, P. (1996). Electron velocity overshoot in strained Si/Si_1-xGe_xMOSFETs. In M. Rudan, & G. Baccarani (Eds.), ESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference (pp. 413-414). Article 5436227 (European Solid-State Device Research Conference). IEEE Computer Society.

@inproceedings{02d29e69259a4e59928e511317ae2f92,

title = "Electron velocity overshoot in strained Si/Si1-xGexMOSFETs",

abstract = "Electron transport properties of strained-Si on relaxed Si1-xGexchannel MOSFETs have been studied using a Monte Carlo simulator. The steady-and non-steady-state high-longitudinal field transport regimes have been described in detail. Electron-velocity-overshoot effects are also studied in deep-submicron strained-Si MOSFETs, where they show an improvement over the performance of their normal silicon counterparts.",

author = "F. Gamiz and Lopez-Villanueva, \{J. A.\} and Roldan, \{J. B.\} and Carceller, \{J. E.\} and P. Cartujo",

note = "Publisher Copyright: {\textcopyright} 1996 Editions Frontieres.; 26th European Solid State Device Research Conference, ESSDERC 1996 ; Conference date: 09-09-1996 Through 11-09-1996",

year = "1996",

month = jan,

day = "1",

language = "English",

isbn = "9782863321966",

series = "European Solid-State Device Research Conference",

publisher = "IEEE Computer Society",

pages = "413--414",

editor = "Massimo Rudan and Giorgio Baccarani",

booktitle = "ESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference",

}

Gamiz, F, Lopez-Villanueva, JA, Roldan, JB, Carceller, JE & Cartujo, P 1996, Electron velocity overshoot in strained Si/Si_1-xGe_xMOSFETs. in M Rudan & G Baccarani (eds), ESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference., 5436227, European Solid-State Device Research Conference, IEEE Computer Society, pp. 413-414, 26th European Solid State Device Research Conference, ESSDERC 1996, Bologna, Italy, 9/09/96.

Electron velocity overshoot in strained Si/Si_1-xGe_xMOSFETs. / Gamiz, F.; Lopez-Villanueva, J. A.; Roldan, J. B. et al.
ESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference. ed. / Massimo Rudan; Giorgio Baccarani. IEEE Computer Society, 1996. p. 413-414 5436227 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Electron velocity overshoot in strained Si/Si1-xGexMOSFETs

AU - Gamiz, F.

AU - Lopez-Villanueva, J. A.

AU - Roldan, J. B.

AU - Carceller, J. E.

AU - Cartujo, P.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - Electron transport properties of strained-Si on relaxed Si1-xGexchannel MOSFETs have been studied using a Monte Carlo simulator. The steady-and non-steady-state high-longitudinal field transport regimes have been described in detail. Electron-velocity-overshoot effects are also studied in deep-submicron strained-Si MOSFETs, where they show an improvement over the performance of their normal silicon counterparts.

AB - Electron transport properties of strained-Si on relaxed Si1-xGexchannel MOSFETs have been studied using a Monte Carlo simulator. The steady-and non-steady-state high-longitudinal field transport regimes have been described in detail. Electron-velocity-overshoot effects are also studied in deep-submicron strained-Si MOSFETs, where they show an improvement over the performance of their normal silicon counterparts.

UR - https://www.scopus.com/pages/publications/84920713820

M3 - Conference contribution

AN - SCOPUS:84920713820

SN - 9782863321966

T3 - European Solid-State Device Research Conference

SP - 413

EP - 414

BT - ESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference

A2 - Rudan, Massimo

A2 - Baccarani, Giorgio

PB - IEEE Computer Society

T2 - 26th European Solid State Device Research Conference, ESSDERC 1996

Y2 - 9 September 1996 through 11 September 1996

ER -

Electron velocity overshoot in strained Si/Si_1-xGe_xMOSFETs

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