Experimental determination of the effective mobility in NMOSFETs: a comparative study

J. Banqueri; J. A. López-Villanueva; P. Cartujo-Cassinello; S. Rodríguez; J. E. Carceller

doi:10.1016/S0038-1101(98)00307-4

Experimental determination of the effective mobility in NMOSFETs: a comparative study

J. Banqueri
, J. A. López-Villanueva
, P. Cartujo-Cassinello
, S. Rodríguez
, J. E. Carceller

Research output: Contribution to journal › Article › peer-review

Abstract

We present a comparison between the different methods reported in the literature to experimentally determine the electron mobility in the channel of a MOSFET. In order to accurately obtain the mobility for use in an I-V model a suitable determination of inversion charge and electric potential is shown to be relevant. Numerical simulation is demonstrated to be a powerful tool to carry out mobility extraction, particularly in the moderate-inversion region, and to accurately calculate the effective electric field.

Original language	English
Pages (from-to)	701-707
Number of pages	7
Journal	Solid State Electronics
Volume	43
Issue number	4
DOIs	https://doi.org/10.1016/S0038-1101(98)00307-4
State	Published - 1 Jan 1999
Externally published	Yes

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Cite this

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title = "Experimental determination of the effective mobility in NMOSFETs: a comparative study",

abstract = "We present a comparison between the different methods reported in the literature to experimentally determine the electron mobility in the channel of a MOSFET. In order to accurately obtain the mobility for use in an I-V model a suitable determination of inversion charge and electric potential is shown to be relevant. Numerical simulation is demonstrated to be a powerful tool to carry out mobility extraction, particularly in the moderate-inversion region, and to accurately calculate the effective electric field.",

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T2 - a comparative study

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AU - Rodríguez, S.

AU - Carceller, J. E.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - We present a comparison between the different methods reported in the literature to experimentally determine the electron mobility in the channel of a MOSFET. In order to accurately obtain the mobility for use in an I-V model a suitable determination of inversion charge and electric potential is shown to be relevant. Numerical simulation is demonstrated to be a powerful tool to carry out mobility extraction, particularly in the moderate-inversion region, and to accurately calculate the effective electric field.

AB - We present a comparison between the different methods reported in the literature to experimentally determine the electron mobility in the channel of a MOSFET. In order to accurately obtain the mobility for use in an I-V model a suitable determination of inversion charge and electric potential is shown to be relevant. Numerical simulation is demonstrated to be a powerful tool to carry out mobility extraction, particularly in the moderate-inversion region, and to accurately calculate the effective electric field.

UR - https://www.scopus.com/pages/publications/0345073158

U2 - 10.1016/S0038-1101(98)00307-4

DO - 10.1016/S0038-1101(98)00307-4

M3 - Article

AN - SCOPUS:0345073158

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JO - Solid State Electronics

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Experimental determination of the effective mobility in NMOSFETs: a comparative study

Abstract

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