Improvement of the k · p approach for describing silicon quantum dots

S. Rodriguez-Bolivar; F. M. Gómez-Campos; A. Luque-Rodríguez; J. A. López-Villanueva; J. A. Jiménez-Tejada; P. Lara-Bullejos; J. E. Carceller

doi:10.1109/SCED.2009.4800446

Improvement of the k · p approach for describing silicon quantum dots

S. Rodriguez-Bolivar
, F. M. Gómez-Campos
, A. Luque-Rodríguez
, J. A. López-Villanueva
, J. A. Jiménez-Tejada
, P. Lara-Bullejos
, J. E. Carceller

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We present in this work a correction to the Effective Mass Approach based on atomistic calculations for studies on hole confinement in silicon quantum dots. The idea is to connect two different frameworks such as Tight-Binding and k·p in order to take advantage of the computational efficiency of the latter. Further, this work would enable to gain an insight into the causes of difference between both approaches.

Original language	English
Title of host publication	Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09
Pages	124-127
Number of pages	4
DOIs	https://doi.org/10.1109/SCED.2009.4800446
State	Published - 24 Apr 2009
Externally published	Yes
Event	2009 Spanish Conference on Electron Devices, CDE'09 - Santiago de Compostela, Spain Duration: 11 Feb 2009 → 13 Feb 2009

Publication series

Name	Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

Conference

Conference	2009 Spanish Conference on Electron Devices, CDE'09
Country/Territory	Spain
City	Santiago de Compostela
Period	11/02/09 → 13/02/09

Access to Document

10.1109/SCED.2009.4800446

Cite this

Rodriguez-Bolivar, S., Gómez-Campos, F. M., Luque-Rodríguez, A., López-Villanueva, J. A., Jiménez-Tejada, J. A., Lara-Bullejos, P., & Carceller, J. E. (2009). Improvement of the k · p approach for describing silicon quantum dots. In Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09 (pp. 124-127). Article 4800446 (Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09). https://doi.org/10.1109/SCED.2009.4800446

@inproceedings{7b84f99af978401b952e45aa5fee8688,

title = "Improvement of the k · p approach for describing silicon quantum dots",

abstract = "We present in this work a correction to the Effective Mass Approach based on atomistic calculations for studies on hole confinement in silicon quantum dots. The idea is to connect two different frameworks such as Tight-Binding and k·p in order to take advantage of the computational efficiency of the latter. Further, this work would enable to gain an insight into the causes of difference between both approaches.",

author = "S. Rodriguez-Bolivar and G{\'o}mez-Campos, \{F. M.\} and A. Luque-Rodr{\'i}guez and L{\'o}pez-Villanueva, \{J. A.\} and Jim{\'e}nez-Tejada, \{J. A.\} and P. Lara-Bullejos and Carceller, \{J. E.\}",

year = "2009",

month = apr,

day = "24",

doi = "10.1109/SCED.2009.4800446",

language = "English",

isbn = "9781424428397",

series = "Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09",

pages = "124--127",

booktitle = "Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09",

note = "2009 Spanish Conference on Electron Devices, CDE'09 ; Conference date: 11-02-2009 Through 13-02-2009",

}

Rodriguez-Bolivar, S, Gómez-Campos, FM, Luque-Rodríguez, A, López-Villanueva, JA, Jiménez-Tejada, JA, Lara-Bullejos, P & Carceller, JE 2009, Improvement of the k · p approach for describing silicon quantum dots. in Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09., 4800446, Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09, pp. 124-127, 2009 Spanish Conference on Electron Devices, CDE'09, Santiago de Compostela, Spain, 11/02/09. https://doi.org/10.1109/SCED.2009.4800446

Improvement of the k · p approach for describing silicon quantum dots. / Rodriguez-Bolivar, S.; Gómez-Campos, F. M.; Luque-Rodríguez, A. et al.
Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09. 2009. p. 124-127 4800446 (Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

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AU - Rodriguez-Bolivar, S.

AU - Gómez-Campos, F. M.

AU - Luque-Rodríguez, A.

AU - López-Villanueva, J. A.

AU - Jiménez-Tejada, J. A.

AU - Lara-Bullejos, P.

AU - Carceller, J. E.

PY - 2009/4/24

Y1 - 2009/4/24

N2 - We present in this work a correction to the Effective Mass Approach based on atomistic calculations for studies on hole confinement in silicon quantum dots. The idea is to connect two different frameworks such as Tight-Binding and k·p in order to take advantage of the computational efficiency of the latter. Further, this work would enable to gain an insight into the causes of difference between both approaches.

AB - We present in this work a correction to the Effective Mass Approach based on atomistic calculations for studies on hole confinement in silicon quantum dots. The idea is to connect two different frameworks such as Tight-Binding and k·p in order to take advantage of the computational efficiency of the latter. Further, this work would enable to gain an insight into the causes of difference between both approaches.

UR - https://www.scopus.com/pages/publications/64949149930

U2 - 10.1109/SCED.2009.4800446

DO - 10.1109/SCED.2009.4800446

M3 - Conference contribution

AN - SCOPUS:64949149930

SN - 9781424428397

T3 - Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

SP - 124

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BT - Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

T2 - 2009 Spanish Conference on Electron Devices, CDE'09

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ER -

Rodriguez-Bolivar S, Gómez-Campos FM, Luque-Rodríguez A, López-Villanueva JA, Jiménez-Tejada JA, Lara-Bullejos P et al. Improvement of the k · p approach for describing silicon quantum dots. In Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09. 2009. p. 124-127. 4800446. (Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09). doi: 10.1109/SCED.2009.4800446

Improvement of the k · p approach for describing silicon quantum dots

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