Influence of dimensionality and stoichiometry in the electronic structure of InAs quantum dot solids

Francisco M. Gomez-Campos; Erik S. Skibinsky-Gitlin; S. Rodriguez-Bolivar; Marco Califano; Panagiotis Rodosthenous; Juan A. Lopez-Villanueva; Juan E. Carceller

doi:10.1109/CDE52135.2021.9455730

Influence of dimensionality and stoichiometry in the electronic structure of InAs quantum dot solids

Francisco M. Gomez-Campos
, Erik S. Skibinsky-Gitlin
, S. Rodriguez-Bolivar
, Marco Califano
, Panagiotis Rodosthenous
, Juan A. Lopez-Villanueva
, Juan E. Carceller

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Periodic quantum dot solids are new materials in which quantum dots are periodically distributed in space. The properties of these materials are explored to find applications in new photovoltaic devices. In order to shed light on these future applications, investigating carrier transport and light absorption are of paramount importance. The first step to investigate these systems is to compute their electronic structures. In this work we present the electronic structure of one- (1D), two- (2D) and three-dimensional (3D) quantum dot solids made of 12 Å radius InAs quantum dots. Two different stoichiometries are studied. In the first case (system A) the quantum dot has an In atom in its center and the interdot contact surfaces along the (111) directions in the arrays are mainly arsenic atoms. In the second case (system B) the atomic positions are inverted, and therefore the contact surfaces between neighbours are mainly indium atoms. The influence of dimensionality and stoichiometry in these quantum dot solids are discussed.

Original language	English
Title of host publication	Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	86-89
Number of pages	4
ISBN (Electronic)	9781665444521
DOIs	https://doi.org/10.1109/CDE52135.2021.9455730
State	Published - 9 Jun 2021
Externally published	Yes
Event	13th Spanish Conference on Electron Devices, CDE 2021 - Sevilla, Spain Duration: 9 Jun 2021 → 11 Jun 2021

Publication series

Name	Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021

Conference

Conference	13th Spanish Conference on Electron Devices, CDE 2021
Country/Territory	Spain
City	Sevilla
Period	9/06/21 → 11/06/21

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

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10.1109/CDE52135.2021.9455730

Cite this

Gomez-Campos, F. M., Skibinsky-Gitlin, E. S., Rodriguez-Bolivar, S., Califano, M., Rodosthenous, P., Lopez-Villanueva, J. A., & Carceller, J. E. (2021). Influence of dimensionality and stoichiometry in the electronic structure of InAs quantum dot solids. In Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021 (pp. 86-89). Article 9455730 (Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CDE52135.2021.9455730

Gomez-Campos, Francisco M. ; Skibinsky-Gitlin, Erik S. ; Rodriguez-Bolivar, S. et al. / Influence of dimensionality and stoichiometry in the electronic structure of InAs quantum dot solids. Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021. Institute of Electrical and Electronics Engineers Inc., 2021. pp. 86-89 (Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021).

@inproceedings{b436ec4a6d154751a02e347e9c87f343,

title = "Influence of dimensionality and stoichiometry in the electronic structure of InAs quantum dot solids",

abstract = "Periodic quantum dot solids are new materials in which quantum dots are periodically distributed in space. The properties of these materials are explored to find applications in new photovoltaic devices. In order to shed light on these future applications, investigating carrier transport and light absorption are of paramount importance. The first step to investigate these systems is to compute their electronic structures. In this work we present the electronic structure of one- (1D), two- (2D) and three-dimensional (3D) quantum dot solids made of 12 {\AA} radius InAs quantum dots. Two different stoichiometries are studied. In the first case (system A) the quantum dot has an In atom in its center and the interdot contact surfaces along the (111) directions in the arrays are mainly arsenic atoms. In the second case (system B) the atomic positions are inverted, and therefore the contact surfaces between neighbours are mainly indium atoms. The influence of dimensionality and stoichiometry in these quantum dot solids are discussed.",

keywords = "miniband structure, photovoltaic device, quantum dot, quantum dot solids",

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note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 13th Spanish Conference on Electron Devices, CDE 2021 ; Conference date: 09-06-2021 Through 11-06-2021",

year = "2021",

month = jun,

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doi = "10.1109/CDE52135.2021.9455730",

language = "English",

series = "Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021",

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}

Gomez-Campos, FM, Skibinsky-Gitlin, ES, Rodriguez-Bolivar, S, Califano, M, Rodosthenous, P, Lopez-Villanueva, JA & Carceller, JE 2021, Influence of dimensionality and stoichiometry in the electronic structure of InAs quantum dot solids. in Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021., 9455730, Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021, Institute of Electrical and Electronics Engineers Inc., pp. 86-89, 13th Spanish Conference on Electron Devices, CDE 2021, Sevilla, Spain, 9/06/21. https://doi.org/10.1109/CDE52135.2021.9455730

Influence of dimensionality and stoichiometry in the electronic structure of InAs quantum dot solids. / Gomez-Campos, Francisco M.; Skibinsky-Gitlin, Erik S.; Rodriguez-Bolivar, S. et al.
Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021. Institute of Electrical and Electronics Engineers Inc., 2021. p. 86-89 9455730 (Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Influence of dimensionality and stoichiometry in the electronic structure of InAs quantum dot solids

AU - Gomez-Campos, Francisco M.

AU - Skibinsky-Gitlin, Erik S.

AU - Rodriguez-Bolivar, S.

AU - Califano, Marco

AU - Rodosthenous, Panagiotis

AU - Lopez-Villanueva, Juan A.

AU - Carceller, Juan E.

PY - 2021/6/9

Y1 - 2021/6/9

N2 - Periodic quantum dot solids are new materials in which quantum dots are periodically distributed in space. The properties of these materials are explored to find applications in new photovoltaic devices. In order to shed light on these future applications, investigating carrier transport and light absorption are of paramount importance. The first step to investigate these systems is to compute their electronic structures. In this work we present the electronic structure of one- (1D), two- (2D) and three-dimensional (3D) quantum dot solids made of 12 Å radius InAs quantum dots. Two different stoichiometries are studied. In the first case (system A) the quantum dot has an In atom in its center and the interdot contact surfaces along the (111) directions in the arrays are mainly arsenic atoms. In the second case (system B) the atomic positions are inverted, and therefore the contact surfaces between neighbours are mainly indium atoms. The influence of dimensionality and stoichiometry in these quantum dot solids are discussed.

AB - Periodic quantum dot solids are new materials in which quantum dots are periodically distributed in space. The properties of these materials are explored to find applications in new photovoltaic devices. In order to shed light on these future applications, investigating carrier transport and light absorption are of paramount importance. The first step to investigate these systems is to compute their electronic structures. In this work we present the electronic structure of one- (1D), two- (2D) and three-dimensional (3D) quantum dot solids made of 12 Å radius InAs quantum dots. Two different stoichiometries are studied. In the first case (system A) the quantum dot has an In atom in its center and the interdot contact surfaces along the (111) directions in the arrays are mainly arsenic atoms. In the second case (system B) the atomic positions are inverted, and therefore the contact surfaces between neighbours are mainly indium atoms. The influence of dimensionality and stoichiometry in these quantum dot solids are discussed.

KW - miniband structure

KW - photovoltaic device

KW - quantum dot

KW - quantum dot solids

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M3 - Conference contribution

AN - SCOPUS:85114437358

T3 - Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021

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EP - 89

BT - Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 13th Spanish Conference on Electron Devices, CDE 2021

Y2 - 9 June 2021 through 11 June 2021

ER -

Gomez-Campos FM, Skibinsky-Gitlin ES, Rodriguez-Bolivar S, Califano M, Rodosthenous P, Lopez-Villanueva JA et al. Influence of dimensionality and stoichiometry in the electronic structure of InAs quantum dot solids. In Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021. Institute of Electrical and Electronics Engineers Inc. 2021. p. 86-89. 9455730. (Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021). doi: 10.1109/CDE52135.2021.9455730

Influence of dimensionality and stoichiometry in the electronic structure of InAs quantum dot solids

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