Influence of dopant profiles and traps on the low frequency noise of four gate transistors

A. Luque Rodríguez; J. A.Jiménez Tejada; J. A.López Villanueva; A. Godoy; P. L. BuUejos; M. Gómez-Campos

doi:10.1063/1.3140542

Influence of dopant profiles and traps on the low frequency noise of four gate transistors

A. Luque Rodríguez
, J. A.Jiménez Tejada
, J. A.López Villanueva
, A. Godoy
, P. L. BuUejos
, M. Gómez-Campos

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This work presents a study that correlates technological parameters of SOI four-gate field-effect-transistors (G4-FET) with their output characteristics and low frequency noise in order to optimize their performance. This structure can control the position and size of the conduction channel by the application of adequate voltages to its four gates (front and back MOS gates and two lateral JFET gates). Due to this reason, many parameters can affect its behavior. We have studied the dependence of I-V characteristics and low frequency noise with parameters such as the doping profile in the channel, drain and source regions, impurities in the volume of the semiconductor, and traps in the Si-Si0 ₂ interfaces.

Original language	English
Title of host publication	Noise and Fluctuations - 20th International Conference on Noise and Fluctuations - ICNF 2009
Pages	585-588
Number of pages	4
DOIs	https://doi.org/10.1063/1.3140542
State	Published - 21 Jul 2009
Externally published	Yes
Event	20th International Conference on Noise and Fluctuations, ICNF 2009 - Pisa, Italy Duration: 14 Jun 2009 → 19 Jun 2009

Publication series

Name	AIP Conference Proceedings
Volume	1129
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	20th International Conference on Noise and Fluctuations, ICNF 2009
Country/Territory	Italy
City	Pisa
Period	14/06/09 → 19/06/09

Access to Document

10.1063/1.3140542

Cite this

Rodríguez, A. L., Tejada, J. A. J., Villanueva, J. A. L., Godoy, A., BuUejos, P. L., & Gómez-Campos, M. (2009). Influence of dopant profiles and traps on the low frequency noise of four gate transistors. In Noise and Fluctuations - 20th International Conference on Noise and Fluctuations - ICNF 2009 (pp. 585-588). (AIP Conference Proceedings; Vol. 1129). https://doi.org/10.1063/1.3140542

@inproceedings{b9d22c2a59884dcb984895395192bc6f,

title = "Influence of dopant profiles and traps on the low frequency noise of four gate transistors",

abstract = "This work presents a study that correlates technological parameters of SOI four-gate field-effect-transistors (G4-FET) with their output characteristics and low frequency noise in order to optimize their performance. This structure can control the position and size of the conduction channel by the application of adequate voltages to its four gates (front and back MOS gates and two lateral JFET gates). Due to this reason, many parameters can affect its behavior. We have studied the dependence of I-V characteristics and low frequency noise with parameters such as the doping profile in the channel, drain and source regions, impurities in the volume of the semiconductor, and traps in the Si-Si0 2 interfaces.",

keywords = "1/f noise, Four-gate transistors, Generation recombination noise",

author = "Rodr{\'i}guez, \{A. Luque\} and Tejada, \{J. A.Jim{\'e}nez\} and Villanueva, \{J. A.L{\'o}pez\} and A. Godoy and BuUejos, \{P. L.\} and M. G{\'o}mez-Campos",

year = "2009",

month = jul,

day = "21",

doi = "10.1063/1.3140542",

language = "English",

isbn = "9780735406650",

series = "AIP Conference Proceedings",

pages = "585--588",

booktitle = "Noise and Fluctuations - 20th International Conference on Noise and Fluctuations - ICNF 2009",

note = "20th International Conference on Noise and Fluctuations, ICNF 2009 ; Conference date: 14-06-2009 Through 19-06-2009",

}

Rodríguez, AL, Tejada, JAJ, Villanueva, JAL, Godoy, A, BuUejos, PL & Gómez-Campos, M 2009, Influence of dopant profiles and traps on the low frequency noise of four gate transistors. in Noise and Fluctuations - 20th International Conference on Noise and Fluctuations - ICNF 2009. AIP Conference Proceedings, vol. 1129, pp. 585-588, 20th International Conference on Noise and Fluctuations, ICNF 2009, Pisa, Italy, 14/06/09. https://doi.org/10.1063/1.3140542

Influence of dopant profiles and traps on the low frequency noise of four gate transistors. / Rodríguez, A. Luque; Tejada, J. A.Jiménez; Villanueva, J. A.López et al.
Noise and Fluctuations - 20th International Conference on Noise and Fluctuations - ICNF 2009. 2009. p. 585-588 (AIP Conference Proceedings; Vol. 1129).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Influence of dopant profiles and traps on the low frequency noise of four gate transistors

AU - Rodríguez, A. Luque

AU - Tejada, J. A.Jiménez

AU - Villanueva, J. A.López

AU - Godoy, A.

AU - BuUejos, P. L.

AU - Gómez-Campos, M.

PY - 2009/7/21

Y1 - 2009/7/21

N2 - This work presents a study that correlates technological parameters of SOI four-gate field-effect-transistors (G4-FET) with their output characteristics and low frequency noise in order to optimize their performance. This structure can control the position and size of the conduction channel by the application of adequate voltages to its four gates (front and back MOS gates and two lateral JFET gates). Due to this reason, many parameters can affect its behavior. We have studied the dependence of I-V characteristics and low frequency noise with parameters such as the doping profile in the channel, drain and source regions, impurities in the volume of the semiconductor, and traps in the Si-Si0 2 interfaces.

AB - This work presents a study that correlates technological parameters of SOI four-gate field-effect-transistors (G4-FET) with their output characteristics and low frequency noise in order to optimize their performance. This structure can control the position and size of the conduction channel by the application of adequate voltages to its four gates (front and back MOS gates and two lateral JFET gates). Due to this reason, many parameters can affect its behavior. We have studied the dependence of I-V characteristics and low frequency noise with parameters such as the doping profile in the channel, drain and source regions, impurities in the volume of the semiconductor, and traps in the Si-Si0 2 interfaces.

KW - 1/f noise

KW - Four-gate transistors

KW - Generation recombination noise

UR - https://www.scopus.com/pages/publications/67650512105

U2 - 10.1063/1.3140542

DO - 10.1063/1.3140542

M3 - Conference contribution

AN - SCOPUS:67650512105

SN - 9780735406650

T3 - AIP Conference Proceedings

SP - 585

EP - 588

BT - Noise and Fluctuations - 20th International Conference on Noise and Fluctuations - ICNF 2009

T2 - 20th International Conference on Noise and Fluctuations, ICNF 2009

Y2 - 14 June 2009 through 19 June 2009

ER -

Influence of dopant profiles and traps on the low frequency noise of four gate transistors

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