Influence of the doping profile on electron mobility in a MOSFET

F. Gamiz; J. A. Lopez-Villanueva; J. B. Roldan; J. E. Carceller

doi:10.1109/16.543043

Influence of the doping profile on electron mobility in a MOSFET

F. Gamiz
, J. A. Lopez-Villanueva
, J. B. Roldan
, J. E. Carceller

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

In this work, the actual effect of the doping profile on electron mobility in MOSFET channels has been studied. For this purpose, a one-electron Monte Carlo simulation has been used to calculate the electron mobility. The influence on the mobility of several ion-implanted profiles typical of present technology and of diffused profiles have been compared.

Original language	English
Pages (from-to)	2023-2025
Number of pages	3
Journal	IEEE Transactions on Electron Devices
Volume	43
Issue number	11
DOIs	https://doi.org/10.1109/16.543043
State	Published - 1 Jan 1996
Externally published	Yes

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title = "Influence of the doping profile on electron mobility in a MOSFET",

abstract = "In this work, the actual effect of the doping profile on electron mobility in MOSFET channels has been studied. For this purpose, a one-electron Monte Carlo simulation has been used to calculate the electron mobility. The influence on the mobility of several ion-implanted profiles typical of present technology and of diffused profiles have been compared.",

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AU - Lopez-Villanueva, J. A.

AU - Roldan, J. B.

AU - Carceller, J. E.

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N2 - In this work, the actual effect of the doping profile on electron mobility in MOSFET channels has been studied. For this purpose, a one-electron Monte Carlo simulation has been used to calculate the electron mobility. The influence on the mobility of several ion-implanted profiles typical of present technology and of diffused profiles have been compared.

AB - In this work, the actual effect of the doping profile on electron mobility in MOSFET channels has been studied. For this purpose, a one-electron Monte Carlo simulation has been used to calculate the electron mobility. The influence on the mobility of several ion-implanted profiles typical of present technology and of diffused profiles have been compared.

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DO - 10.1109/16.543043

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JF - IEEE Transactions on Electron Devices

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Influence of the doping profile on electron mobility in a MOSFET

Abstract

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