Influence of the Oxide-Charge Distribution Profile on Electron Mobility in MOSFET's

F. Gámiz; J. A. López-Villanueva; J. Banqueri; J. E. Carceller

doi:10.1109/16.381999

Influence of the Oxide-Charge Distribution Profile on Electron Mobility in MOSFET's

F. Gámiz, J. A. López-Villanueva, J. Banqueri, J. E. Carceller

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

To characterize the effect of oxide-charge distribution on electron mobility in a MOSFET channel, a more precise method for obtaining the oxide-charge profile than C-V measurement is needed. We have shown by Monte Carlo simulation that the effective interface-charge concentration obtained from threshold voltage measurements does not reproduce the actual effect that the oxide charge has on electron mobility. It is therefore absolutely necessary to know the real profile of the charge distribution. An analytical expression to obtain the interface-charge concentration which correctly models the effect of the actual oxide-charge distribution is calculated from Monte Carlo results.

Original language	English
Pages (from-to)	999-1004
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	42
Issue number	5
DOIs	https://doi.org/10.1109/16.381999
State	Published - 1 Jan 1995
Externally published	Yes

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@article{d83679311e5c49f7b04ae3df22273219,

title = "Influence of the Oxide-Charge Distribution Profile on Electron Mobility in MOSFET's",

abstract = "To characterize the effect of oxide-charge distribution on electron mobility in a MOSFET channel, a more precise method for obtaining the oxide-charge profile than C-V measurement is needed. We have shown by Monte Carlo simulation that the effective interface-charge concentration obtained from threshold voltage measurements does not reproduce the actual effect that the oxide charge has on electron mobility. It is therefore absolutely necessary to know the real profile of the charge distribution. An analytical expression to obtain the interface-charge concentration which correctly models the effect of the actual oxide-charge distribution is calculated from Monte Carlo results.",

author = "F. G{\'a}miz and L{\'o}pez-Villanueva, \{J. A.\} and J. Banqueri and Carceller, \{J. E.\}",

year = "1995",

month = jan,

day = "1",

doi = "10.1109/16.381999",

language = "English",

volume = "42",

pages = "999--1004",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

}

TY - JOUR

T1 - Influence of the Oxide-Charge Distribution Profile on Electron Mobility in MOSFET's

AU - Gámiz, F.

AU - López-Villanueva, J. A.

AU - Banqueri, J.

AU - Carceller, J. E.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - To characterize the effect of oxide-charge distribution on electron mobility in a MOSFET channel, a more precise method for obtaining the oxide-charge profile than C-V measurement is needed. We have shown by Monte Carlo simulation that the effective interface-charge concentration obtained from threshold voltage measurements does not reproduce the actual effect that the oxide charge has on electron mobility. It is therefore absolutely necessary to know the real profile of the charge distribution. An analytical expression to obtain the interface-charge concentration which correctly models the effect of the actual oxide-charge distribution is calculated from Monte Carlo results.

AB - To characterize the effect of oxide-charge distribution on electron mobility in a MOSFET channel, a more precise method for obtaining the oxide-charge profile than C-V measurement is needed. We have shown by Monte Carlo simulation that the effective interface-charge concentration obtained from threshold voltage measurements does not reproduce the actual effect that the oxide charge has on electron mobility. It is therefore absolutely necessary to know the real profile of the charge distribution. An analytical expression to obtain the interface-charge concentration which correctly models the effect of the actual oxide-charge distribution is calculated from Monte Carlo results.

UR - https://www.scopus.com/pages/publications/0029307946

U2 - 10.1109/16.381999

DO - 10.1109/16.381999

M3 - Article

AN - SCOPUS:0029307946

SN - 0018-9383

VL - 42

SP - 999

EP - 1004

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 5

ER -

Influence of the Oxide-Charge Distribution Profile on Electron Mobility in MOSFET's

Abstract

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