Low-temperature modelling of electron-velocity-overshoot effects on 70-250 nm gate-length MOSFETs

J. B. Roldán; F. Gámiz; J. A. López-Villanueva; J. E. Carceller

doi:10.1051/jp4:1996302

Low-temperature modelling of electron-velocity-overshoot effects on 70-250 nm gate-length MOSFETs

J. B. Roldán, F. Gámiz, J. A. López-Villanueva, J. E. Carceller

Research output: Contribution to journal › Article › peer-review

Abstract

Modelling of the increase of MOSFET transconductance produced by electron-velocity overshoot as channel lengths are reduced has been performed at low temperature. The results obtained have been compared to room-temperature ones. To accomplish this, the charge-control model has been used to obtain a simple analytical expression to account for electron-velocity overshoot effects on the performance of very short channel MOSFETs. This model can be easily included in circuit simulators of systems with a huge number of components. Experimental verification of the accuracy of this model is provided. The improvement of MOSFET transconductance due to electron-velocity overshoot is found to be greater at low temperature than at room temperature.

Original language	English
Pages (from-to)	13-18
Number of pages	6
Journal	Journal De Physique. IV : JP
Volume	6
Issue number	3
DOIs	https://doi.org/10.1051/jp4:1996302
State	Published - 1 Jan 1996
Externally published	Yes

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title = "Low-temperature modelling of electron-velocity-overshoot effects on 70-250 nm gate-length MOSFETs",

abstract = "Modelling of the increase of MOSFET transconductance produced by electron-velocity overshoot as channel lengths are reduced has been performed at low temperature. The results obtained have been compared to room-temperature ones. To accomplish this, the charge-control model has been used to obtain a simple analytical expression to account for electron-velocity overshoot effects on the performance of very short channel MOSFETs. This model can be easily included in circuit simulators of systems with a huge number of components. Experimental verification of the accuracy of this model is provided. The improvement of MOSFET transconductance due to electron-velocity overshoot is found to be greater at low temperature than at room temperature.",

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AU - Roldán, J. B.

AU - Gámiz, F.

AU - López-Villanueva, J. A.

AU - Carceller, J. E.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - Modelling of the increase of MOSFET transconductance produced by electron-velocity overshoot as channel lengths are reduced has been performed at low temperature. The results obtained have been compared to room-temperature ones. To accomplish this, the charge-control model has been used to obtain a simple analytical expression to account for electron-velocity overshoot effects on the performance of very short channel MOSFETs. This model can be easily included in circuit simulators of systems with a huge number of components. Experimental verification of the accuracy of this model is provided. The improvement of MOSFET transconductance due to electron-velocity overshoot is found to be greater at low temperature than at room temperature.

AB - Modelling of the increase of MOSFET transconductance produced by electron-velocity overshoot as channel lengths are reduced has been performed at low temperature. The results obtained have been compared to room-temperature ones. To accomplish this, the charge-control model has been used to obtain a simple analytical expression to account for electron-velocity overshoot effects on the performance of very short channel MOSFETs. This model can be easily included in circuit simulators of systems with a huge number of components. Experimental verification of the accuracy of this model is provided. The improvement of MOSFET transconductance due to electron-velocity overshoot is found to be greater at low temperature than at room temperature.

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ER -

Low-temperature modelling of electron-velocity-overshoot effects on 70-250 nm gate-length MOSFETs

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