Modeling effects of electron-velocity overshoot in a MOSFET

J. B. Roldán; F. Gámiz; J. A. López-Villanueva; J. E. Carceller

doi:10.1109/16.568047

Modeling effects of electron-velocity overshoot in a MOSFET

J. B. Roldán
, F. Gámiz
, J. A. López-Villanueva
, J. E. Carceller

Research output: Contribution to journal › Article › peer-review

55 Scopus citations

Abstract

A simple analytical expression to account for electron-velocity overshoot effects on the performance of very short-channel MOSFET's has been obtained. This new model can be easily included in circuit simulators of systems with a huge number of components. The influence of temperature and low-field mobility on the increase of MOSFET transconductance produced by electron-velocity overshoot as channel lengths are reduced can be easily taken into account in our model. The accuracy of this model has been verified by reproducing experimental and simulated data reported by other authors.

Original language	English
Pages (from-to)	841-846
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	44
Issue number	5
DOIs	https://doi.org/10.1109/16.568047
State	Published - 1 Dec 1997
Externally published	Yes

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AU - Carceller, J. E.

PY - 1997/12/1

Y1 - 1997/12/1

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Modeling effects of electron-velocity overshoot in a MOSFET

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