Monte Carlo simulation of a submicron MOSFET including inversion layer quantization

J. B. Roldan; F. Gamiz; J. A. Lopez-Villanueva; J. E. Carceller

doi:10.1155/1998/26390

Monte Carlo simulation of a submicron MOSFET including inversion layer quantization

J. B. Roldan
, F. Gamiz
, J. A. Lopez-Villanueva
, J. E. Carceller

Research output: Contribution to journal › Article › peer-review

Abstract

A Monte Carlo simulator of the electron dynamics in the channel, coupled with a solution of the two-dimensional Poisson equation including inversion-layer quantization and drift-diffusion equations has been developed. This simulator has been applied to the study of electron transport in normal operation conditions for different submicron channel length devices. Some interesting non-local effects such as electron velocity overshoot can be observed.

Original language	English
Pages (from-to)	287-290
Number of pages	4
Journal	VLSI Design
Volume	6
Issue number	1-4
DOIs	https://doi.org/10.1155/1998/26390
State	Published - 1 Jan 1998
Externally published	Yes

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title = "Monte Carlo simulation of a submicron MOSFET including inversion layer quantization",

abstract = "A Monte Carlo simulator of the electron dynamics in the channel, coupled with a solution of the two-dimensional Poisson equation including inversion-layer quantization and drift-diffusion equations has been developed. This simulator has been applied to the study of electron transport in normal operation conditions for different submicron channel length devices. Some interesting non-local effects such as electron velocity overshoot can be observed.",

author = "Roldan, \{J. B.\} and F. Gamiz and Lopez-Villanueva, \{J. A.\} and Carceller, \{J. E.\}",

year = "1998",

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doi = "10.1155/1998/26390",

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journal = "VLSI Design",

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AU - Roldan, J. B.

AU - Gamiz, F.

AU - Lopez-Villanueva, J. A.

AU - Carceller, J. E.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - A Monte Carlo simulator of the electron dynamics in the channel, coupled with a solution of the two-dimensional Poisson equation including inversion-layer quantization and drift-diffusion equations has been developed. This simulator has been applied to the study of electron transport in normal operation conditions for different submicron channel length devices. Some interesting non-local effects such as electron velocity overshoot can be observed.

AB - A Monte Carlo simulator of the electron dynamics in the channel, coupled with a solution of the two-dimensional Poisson equation including inversion-layer quantization and drift-diffusion equations has been developed. This simulator has been applied to the study of electron transport in normal operation conditions for different submicron channel length devices. Some interesting non-local effects such as electron velocity overshoot can be observed.

UR - https://www.scopus.com/pages/publications/0031636106

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DO - 10.1155/1998/26390

M3 - Article

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VL - 6

SP - 287

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JO - VLSI Design

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IS - 1-4

ER -

Monte Carlo simulation of a submicron MOSFET including inversion layer quantization

Abstract

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