Monte Carlo simulation of electron mobility in silicon-on-insulator structures

F. Gámiz; J. B. Roldán; J. A. López-Villanueva; P. Cartujo-Cassinello; F. Jiménez-Molinos

doi:10.1016/S0038-1101(02)00149-1

Monte Carlo simulation of electron mobility in silicon-on-insulator structures

F. Gámiz
, J. B. Roldán
, J. A. López-Villanueva
, P. Cartujo-Cassinello
, F. Jiménez-Molinos

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

A Monte Carlo simulator has been used to study the electron mobility in different silicon-on-insulator structures at room and lower temperatures. Electron mobility behaviour in single-gate SOI MOSFETs is compared to that in double gate devices. The role of volume inversion is analysed. In addition, the electron mobility in strained silicon-on-SiGe-on-insulator inversion layer is also studied.

Original language	English
Pages (from-to)	1715-1721
Number of pages	7
Journal	Solid State Electronics
Volume	46
Issue number	11
DOIs	https://doi.org/10.1016/S0038-1101(02)00149-1
State	Published - 1 Nov 2002
Externally published	Yes

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10.1016/S0038-1101(02)00149-1

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title = "Monte Carlo simulation of electron mobility in silicon-on-insulator structures",

abstract = "A Monte Carlo simulator has been used to study the electron mobility in different silicon-on-insulator structures at room and lower temperatures. Electron mobility behaviour in single-gate SOI MOSFETs is compared to that in double gate devices. The role of volume inversion is analysed. In addition, the electron mobility in strained silicon-on-SiGe-on-insulator inversion layer is also studied.",

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T1 - Monte Carlo simulation of electron mobility in silicon-on-insulator structures

AU - Gámiz, F.

AU - Roldán, J. B.

AU - López-Villanueva, J. A.

AU - Cartujo-Cassinello, P.

AU - Jiménez-Molinos, F.

PY - 2002/11/1

Y1 - 2002/11/1

N2 - A Monte Carlo simulator has been used to study the electron mobility in different silicon-on-insulator structures at room and lower temperatures. Electron mobility behaviour in single-gate SOI MOSFETs is compared to that in double gate devices. The role of volume inversion is analysed. In addition, the electron mobility in strained silicon-on-SiGe-on-insulator inversion layer is also studied.

AB - A Monte Carlo simulator has been used to study the electron mobility in different silicon-on-insulator structures at room and lower temperatures. Electron mobility behaviour in single-gate SOI MOSFETs is compared to that in double gate devices. The role of volume inversion is analysed. In addition, the electron mobility in strained silicon-on-SiGe-on-insulator inversion layer is also studied.

UR - https://www.scopus.com/pages/publications/0036839339

U2 - 10.1016/S0038-1101(02)00149-1

DO - 10.1016/S0038-1101(02)00149-1

M3 - Article

AN - SCOPUS:0036839339

SN - 0038-1101

VL - 46

SP - 1715

EP - 1721

JO - Solid State Electronics

JF - Solid State Electronics

IS - 11

ER -

Monte Carlo simulation of electron mobility in silicon-on-insulator structures

Abstract

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