Monte Carlo study on electron transport properties in double-gate fully depleted SOI-MOSFETs

F. Gámiz; J. B. Roldán; J. A. López-Villanueva; J. E. Carceller

doi:10.1109/ESSDERC.1997.194402

Monte Carlo study on electron transport properties in double-gate fully depleted SOI-MOSFETs

F. Gámiz
, J. B. Roldán
, J. A. López-Villanueva
, J. E. Carceller

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The transport properties of very thin double gate SOI MOSFETs, have been studied. We have shown the importance of volume inversion, which greatly reduces the dependence of the electron mobility on the surface scattering mechanisms, and enhances the mobility at high inversion charge concentrations. We have also shown that if the silicon film is extremely thin, electron mobility abruptly decreases due to stronger phonon scattering.

Original language	English
Title of host publication	European Solid-State Device Research Conference
Editors	H. Grunbacher
Publisher	IEEE Computer Society
Pages	208-211
Number of pages	4
ISBN (Electronic)	2863322214
DOIs	https://doi.org/10.1109/ESSDERC.1997.194402
State	Published - 1 Jan 1997
Externally published	Yes
Event	27th European Solid-State Device Research Conference, ESSDERC 1997 - Stuttgart, Germany Duration: 22 Sep 1997 → 24 Sep 1997

Publication series

Name	European Solid-State Device Research Conference
ISSN (Print)	1930-8876

Conference

Conference	27th European Solid-State Device Research Conference, ESSDERC 1997
Country/Territory	Germany
City	Stuttgart
Period	22/09/97 → 24/09/97

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10.1109/ESSDERC.1997.194402

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Gámiz, F., Roldán, J. B., López-Villanueva, J. A., & Carceller, J. E. (1997). Monte Carlo study on electron transport properties in double-gate fully depleted SOI-MOSFETs. In H. Grunbacher (Ed.), European Solid-State Device Research Conference (pp. 208-211). (European Solid-State Device Research Conference). IEEE Computer Society. https://doi.org/10.1109/ESSDERC.1997.194402

@inproceedings{4d76179789ce4c468fbddc9c9f036f08,

title = "Monte Carlo study on electron transport properties in double-gate fully depleted SOI-MOSFETs",

abstract = "The transport properties of very thin double gate SOI MOSFETs, have been studied. We have shown the importance of volume inversion, which greatly reduces the dependence of the electron mobility on the surface scattering mechanisms, and enhances the mobility at high inversion charge concentrations. We have also shown that if the silicon film is extremely thin, electron mobility abruptly decreases due to stronger phonon scattering.",

author = "F. G{\'a}miz and Rold{\'a}n, \{J. B.\} and L{\'o}pez-Villanueva, \{J. A.\} and Carceller, \{J. E.\}",

year = "1997",

month = jan,

day = "1",

doi = "10.1109/ESSDERC.1997.194402",

language = "English",

series = "European Solid-State Device Research Conference",

publisher = "IEEE Computer Society",

pages = "208--211",

editor = "H. Grunbacher",

booktitle = "European Solid-State Device Research Conference",

note = "27th European Solid-State Device Research Conference, ESSDERC 1997 ; Conference date: 22-09-1997 Through 24-09-1997",

}

Gámiz, F, Roldán, JB, López-Villanueva, JA & Carceller, JE 1997, Monte Carlo study on electron transport properties in double-gate fully depleted SOI-MOSFETs. in H Grunbacher (ed.), European Solid-State Device Research Conference. European Solid-State Device Research Conference, IEEE Computer Society, pp. 208-211, 27th European Solid-State Device Research Conference, ESSDERC 1997, Stuttgart, Germany, 22/09/97. https://doi.org/10.1109/ESSDERC.1997.194402

Monte Carlo study on electron transport properties in double-gate fully depleted SOI-MOSFETs. / Gámiz, F.; Roldán, J. B.; López-Villanueva, J. A. et al.
European Solid-State Device Research Conference. ed. / H. Grunbacher. IEEE Computer Society, 1997. p. 208-211 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Monte Carlo study on electron transport properties in double-gate fully depleted SOI-MOSFETs

AU - Gámiz, F.

AU - Roldán, J. B.

AU - López-Villanueva, J. A.

AU - Carceller, J. E.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - The transport properties of very thin double gate SOI MOSFETs, have been studied. We have shown the importance of volume inversion, which greatly reduces the dependence of the electron mobility on the surface scattering mechanisms, and enhances the mobility at high inversion charge concentrations. We have also shown that if the silicon film is extremely thin, electron mobility abruptly decreases due to stronger phonon scattering.

AB - The transport properties of very thin double gate SOI MOSFETs, have been studied. We have shown the importance of volume inversion, which greatly reduces the dependence of the electron mobility on the surface scattering mechanisms, and enhances the mobility at high inversion charge concentrations. We have also shown that if the silicon film is extremely thin, electron mobility abruptly decreases due to stronger phonon scattering.

UR - https://www.scopus.com/pages/publications/84907554763

U2 - 10.1109/ESSDERC.1997.194402

DO - 10.1109/ESSDERC.1997.194402

M3 - Conference contribution

AN - SCOPUS:84907554763

T3 - European Solid-State Device Research Conference

SP - 208

EP - 211

BT - European Solid-State Device Research Conference

A2 - Grunbacher, H.

PB - IEEE Computer Society

T2 - 27th European Solid-State Device Research Conference, ESSDERC 1997

Y2 - 22 September 1997 through 24 September 1997

ER -

Monte Carlo study on electron transport properties in double-gate fully depleted SOI-MOSFETs

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