Optoelectronic properties in InAs/GaAs quantum dots arrays systems

  • A. Luque Rodríguez
  • , S. Rodríguez-Bolívar
  • , F. M. Gómez-Campos
  • , J. A.López Villanueva
  • , J. A.Jiménez Tejada
  • , T. García
  • , J. E. Carceller

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A study of the physics of electronic states in cubic InAs quantum dot periodic nanostructures embedded in GaAs is presented. The miniband structure of electron states in the conduction band is related to the size and density of the quantum dots. The effect of strain is also taken into account in the simulations. The photon-electron absorption coefficient is obtained for different quantum dot configurations and different light polarization as well.

Original languageEnglish
Title of host publicationProceedings of the 8th Spanish Conference on Electron Devices, CDE'2011
DOIs
StatePublished - 12 May 2011
Externally publishedYes
Event8th Spanish Conference on Electron Devices, CDE 2011 - Palma de Mallorca, Spain
Duration: 8 Feb 201111 Feb 2011

Publication series

NameProceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

Conference

Conference8th Spanish Conference on Electron Devices, CDE 2011
Country/TerritorySpain
CityPalma de Mallorca
Period8/02/1111/02/11

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