Phonon-limited electron mobility in ultrathin silicon-on-insulator inversion layers

F. Gámiz; J. B. Roldán; J. A. López-Villanueva

doi:10.1063/1.367273

Phonon-limited electron mobility in ultrathin silicon-on-insulator inversion layers

F. Gámiz
, J. B. Roldán
, J. A. López-Villanueva

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

Phonon-limited mobility in ultrathin silicon-on-insulator inversion layers has been calculated by the Monte Carlo method both at room and at lower temperatures. The phonon-scattering rate has been shown to increase as a consequence of the greater confinement of electrons as the top silicon film thickness shrinks below a determined value. This fact helps to explain the mobility decrease that appears experimentally in these devices.

Original language	English
Pages (from-to)	4802-4806
Number of pages	5
Journal	Journal of Applied Physics
Volume	83
Issue number	9
DOIs	https://doi.org/10.1063/1.367273
State	Published - 1 May 1998
Externally published	Yes

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title = "Phonon-limited electron mobility in ultrathin silicon-on-insulator inversion layers",

abstract = "Phonon-limited mobility in ultrathin silicon-on-insulator inversion layers has been calculated by the Monte Carlo method both at room and at lower temperatures. The phonon-scattering rate has been shown to increase as a consequence of the greater confinement of electrons as the top silicon film thickness shrinks below a determined value. This fact helps to explain the mobility decrease that appears experimentally in these devices.",

author = "F. G{\'a}miz and Rold{\'a}n, \{J. B.\} and L{\'o}pez-Villanueva, \{J. A.\}",

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AU - Gámiz, F.

AU - Roldán, J. B.

AU - López-Villanueva, J. A.

PY - 1998/5/1

Y1 - 1998/5/1

N2 - Phonon-limited mobility in ultrathin silicon-on-insulator inversion layers has been calculated by the Monte Carlo method both at room and at lower temperatures. The phonon-scattering rate has been shown to increase as a consequence of the greater confinement of electrons as the top silicon film thickness shrinks below a determined value. This fact helps to explain the mobility decrease that appears experimentally in these devices.

AB - Phonon-limited mobility in ultrathin silicon-on-insulator inversion layers has been calculated by the Monte Carlo method both at room and at lower temperatures. The phonon-scattering rate has been shown to increase as a consequence of the greater confinement of electrons as the top silicon film thickness shrinks below a determined value. This fact helps to explain the mobility decrease that appears experimentally in these devices.

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U2 - 10.1063/1.367273

DO - 10.1063/1.367273

M3 - Article

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JO - Journal of Applied Physics

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IS - 9

ER -

Phonon-limited electron mobility in ultrathin silicon-on-insulator inversion layers

Abstract

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