Strained-Si on Si1-xGex MOSFET inversion layer centroid modeling

J. B. Roldán; F. Gámiz; J. A. López-Villanueva; P. Cartujo; A. Godoy

doi:10.1109/16.954492

Strained-Si on Si_1-xGe_x MOSFET inversion layer centroid modeling

J. B. Roldán
, F. Gámiz
, J. A. López-Villanueva
, P. Cartujo
, A. Godoy

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

An accurate model for the inversion charge centroid of strained-Si on Si_1-xGe_x metal-oxide semiconductor field effect transistors (MOSFETs) has been developed including the dependencies on the germanium mole fraction, the doping concentration, and the width of the strained-Si layer. We have also obtained a good estimation of the inversion charge. The inclusion of quantum effects in classical simulators by means of a corrected gate-oxide width can be easily performed making use of this new model.

Original language	English
Pages (from-to)	2447-2449
Number of pages	3
Journal	IEEE Transactions on Electron Devices
Volume	48
Issue number	10
DOIs	https://doi.org/10.1109/16.954492
State	Published - 1 Oct 2001
Externally published	Yes

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@article{ecc5302a75c74a31a637d4d7983d45aa,

title = "Strained-Si on Si1-xGex MOSFET inversion layer centroid modeling",

abstract = "An accurate model for the inversion charge centroid of strained-Si on Si1-xGex metal-oxide semiconductor field effect transistors (MOSFETs) has been developed including the dependencies on the germanium mole fraction, the doping concentration, and the width of the strained-Si layer. We have also obtained a good estimation of the inversion charge. The inclusion of quantum effects in classical simulators by means of a corrected gate-oxide width can be easily performed making use of this new model.",

keywords = "Inversion layers, MOSFETs, SiGe, Simulation",

author = "Rold{\'a}n, \{J. B.\} and F. G{\'a}miz and L{\'o}pez-Villanueva, \{J. A.\} and P. Cartujo and A. Godoy",

year = "2001",

month = oct,

day = "1",

doi = "10.1109/16.954492",

language = "English",

volume = "48",

pages = "2447--2449",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - Strained-Si on Si1-xGex MOSFET inversion layer centroid modeling

AU - Roldán, J. B.

AU - Gámiz, F.

AU - López-Villanueva, J. A.

AU - Cartujo, P.

AU - Godoy, A.

PY - 2001/10/1

Y1 - 2001/10/1

N2 - An accurate model for the inversion charge centroid of strained-Si on Si1-xGex metal-oxide semiconductor field effect transistors (MOSFETs) has been developed including the dependencies on the germanium mole fraction, the doping concentration, and the width of the strained-Si layer. We have also obtained a good estimation of the inversion charge. The inclusion of quantum effects in classical simulators by means of a corrected gate-oxide width can be easily performed making use of this new model.

AB - An accurate model for the inversion charge centroid of strained-Si on Si1-xGex metal-oxide semiconductor field effect transistors (MOSFETs) has been developed including the dependencies on the germanium mole fraction, the doping concentration, and the width of the strained-Si layer. We have also obtained a good estimation of the inversion charge. The inclusion of quantum effects in classical simulators by means of a corrected gate-oxide width can be easily performed making use of this new model.

KW - Inversion layers

KW - MOSFETs

KW - SiGe

KW - Simulation

UR - https://www.scopus.com/pages/publications/0035471976

U2 - 10.1109/16.954492

DO - 10.1109/16.954492

M3 - Article

AN - SCOPUS:0035471976

SN - 0018-9383

VL - 48

SP - 2447

EP - 2449

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 10

ER -

Strained-Si on Si_1-xGe_x MOSFET inversion layer centroid modeling

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