TY - JOUR
T1 - The dependence of the electron mobility on the longitudinal electric field in MOSFETs
AU - Roldán, J. B.
AU - Gámiz, F.
AU - López-Villanueva, J. A.
AU - Carceller, J. E.
AU - Cartujo, P.
PY - 1997/3/1
Y1 - 1997/3/1
N2 - The dependence of the electron mobility on the longitudinal electric field in MOSFETs has been studied in detail. To do so, a Monte Carlo simulation of the electron dynamics in the channel, coupled with a solution of the two-dimensional Poisson equation including inversion-layer quantization and drift-diffusion equations, has been developed. A simplified description of the silicon band structure in the effective-mass approximation including non-parabolicity has been considered. Different-channel-length MOSFETs and different biases have been taken into account. It has been shown that in order to accurately describe electron-mobility behaviour in short-channel MOSFETs it is necessary to take into account the electron-velocity overshoot. An analytical expression, easy to include in device simulators, is provided to account for the dependence of the electron mobility on the high values of the longitudinal electric field and of its gradient found in state-of-the-art MOSFETs.
AB - The dependence of the electron mobility on the longitudinal electric field in MOSFETs has been studied in detail. To do so, a Monte Carlo simulation of the electron dynamics in the channel, coupled with a solution of the two-dimensional Poisson equation including inversion-layer quantization and drift-diffusion equations, has been developed. A simplified description of the silicon band structure in the effective-mass approximation including non-parabolicity has been considered. Different-channel-length MOSFETs and different biases have been taken into account. It has been shown that in order to accurately describe electron-mobility behaviour in short-channel MOSFETs it is necessary to take into account the electron-velocity overshoot. An analytical expression, easy to include in device simulators, is provided to account for the dependence of the electron mobility on the high values of the longitudinal electric field and of its gradient found in state-of-the-art MOSFETs.
UR - https://www.scopus.com/pages/publications/0000974699
U2 - 10.1088/0268-1242/12/3/014
DO - 10.1088/0268-1242/12/3/014
M3 - Article
AN - SCOPUS:0000974699
SN - 0268-1242
VL - 12
SP - 321
EP - 330
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 3
ER -