A closed-loop evaluation and validation of a method for determining the dependence of the electron mobility on the longitudinal-electric field in mosfet's

A new experimental method for determining the dependence of the electron mobility on the longitudinal-electric field has been developed. The development, validation, and explanation of this new method has been carefully carried out. We have applied this procedure to standard submicron MOSFET's and after having obtained the mobility dependence on both the transverse- and longitudinal-electric fields, we reproduced the experimental output curves. The saturation velocity has also been calculated using the mobility curves obtained by this new method. A saturation-velocity value higher than other previously reported experimental ones was observed. This saturation-velocity value is similar to those calculated with Monte Carlo MOSFET simulators.