A comparison of models for phonon scattering in silicon inversion layers

F. Gámiz; J. A. López-Villanueva

doi:10.1063/1.359500

A comparison of models for phonon scattering in silicon inversion layers

F. Gámiz
, J. A. López-Villanueva

Producción científica: Contribución a una revista › Artículo de revisión › revisión exhaustiva

17 Citas (Scopus)

Resumen

Two-dimensional (2D) and quasi-two-dimensional (Q2D) models for phonon scattering in Si-(100) inversion layers are compared. An analytical expression for an electron mobility component limited by phonons, recently reported with the 2D model, is modified by using the Q2D approach.

Idioma original	Inglés
Páginas (desde-hasta)	4128-4129
Número de páginas	2
Publicación	Journal of Applied Physics
Volumen	77
N.º	8
DOI	https://doi.org/10.1063/1.359500
Estado	Publicada - 1 ene. 1995
Publicado de forma externa	Sí

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title = "A comparison of models for phonon scattering in silicon inversion layers",

abstract = "Two-dimensional (2D) and quasi-two-dimensional (Q2D) models for phonon scattering in Si-(100) inversion layers are compared. An analytical expression for an electron mobility component limited by phonons, recently reported with the 2D model, is modified by using the Q2D approach.",

author = "F. G{\'a}miz and L{\'o}pez-Villanueva, \{J. A.\}",

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AU - Gámiz, F.

AU - López-Villanueva, J. A.

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N2 - Two-dimensional (2D) and quasi-two-dimensional (Q2D) models for phonon scattering in Si-(100) inversion layers are compared. An analytical expression for an electron mobility component limited by phonons, recently reported with the 2D model, is modified by using the Q2D approach.

AB - Two-dimensional (2D) and quasi-two-dimensional (Q2D) models for phonon scattering in Si-(100) inversion layers are compared. An analytical expression for an electron mobility component limited by phonons, recently reported with the 2D model, is modified by using the Q2D approach.

UR - https://www.scopus.com/pages/publications/36449002643

U2 - 10.1063/1.359500

DO - 10.1063/1.359500

M3 - Review article

AN - SCOPUS:36449002643

SN - 0021-8979

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EP - 4129

JO - Journal of Applied Physics

JF - Journal of Applied Physics

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A comparison of models for phonon scattering in silicon inversion layers

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