TY - JOUR
T1 - A comprehensive model for Coulomb scattering in inversion layers
AU - Gámiz, F.
AU - López-Villanueva, J. A.
AU - Jiménez-Tejada, J. A.
AU - Melchor, I.
AU - Palma, A.
PY - 1994/12/1
Y1 - 1994/12/1
N2 - A comprehensive model for Coulomb scattering in inversion layers is presented. This model simultaneously takes into account the effects of: (i) the screening of charged centers by mobile carriers, (ii) the distribution of charged centers inside the structure, (iii) the actual electron distribution in the inversion layer, (iv) the charged-center correlation, and (v) the effect of image charges. A Monte Carlo calculation to obtain the effective mobility of electrons in an n-Si(100) inversion layer by using the model proposed for Coulomb scattering has been developed. The importance of correctly taking into account the effects above to study Coulomb scattering in inversion layers is pointed out.
AB - A comprehensive model for Coulomb scattering in inversion layers is presented. This model simultaneously takes into account the effects of: (i) the screening of charged centers by mobile carriers, (ii) the distribution of charged centers inside the structure, (iii) the actual electron distribution in the inversion layer, (iv) the charged-center correlation, and (v) the effect of image charges. A Monte Carlo calculation to obtain the effective mobility of electrons in an n-Si(100) inversion layer by using the model proposed for Coulomb scattering has been developed. The importance of correctly taking into account the effects above to study Coulomb scattering in inversion layers is pointed out.
UR - https://www.scopus.com/pages/publications/0000609531
U2 - 10.1063/1.356448
DO - 10.1063/1.356448
M3 - Article
AN - SCOPUS:0000609531
SN - 0021-8979
VL - 75
SP - 924
EP - 934
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 2
ER -