A model for the drain current of deep submicrometer MOSFET's including electron-velocity overshoot

J. B. Roldân; F. Gâmiz; J. A. Lopez-Villanueva; P. Cartujo; J. E. Carceller

doi:10.1109/16.725262

A model for the drain current of deep submicrometer MOSFET's including electron-velocity overshoot

J. B. Roldân
, F. Gâmiz
, J. A. Lopez-Villanueva
, P. Cartujo
, J. E. Carceller

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

22 Citas (Scopus)

Resumen

We have developed a new analytical ultra-short channel MOSFET model for circuit simulation including velocity overshoot effects. We have been able to reproduce experimental I-V curves and conductances of MOSFET's down to 0.07 /jm channel lengths both at low and room temperatures.

Idioma original	Inglés
Páginas (desde-hasta)	2249-2251
Número de páginas	3
Publicación	IEEE Transactions on Electron Devices
Volumen	45
N.º	10
DOI	https://doi.org/10.1109/16.725262
Estado	Publicada - 1 dic. 1998
Publicado de forma externa	Sí

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abstract = "We have developed a new analytical ultra-short channel MOSFET model for circuit simulation including velocity overshoot effects. We have been able to reproduce experimental I-V curves and conductances of MOSFET's down to 0.07 /jm channel lengths both at low and room temperatures.",

keywords = "Mos devices, Semiconductor device modeling",

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AU - Gâmiz, F.

AU - Lopez-Villanueva, J. A.

AU - Cartujo, P.

AU - Carceller, J. E.

PY - 1998/12/1

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AB - We have developed a new analytical ultra-short channel MOSFET model for circuit simulation including velocity overshoot effects. We have been able to reproduce experimental I-V curves and conductances of MOSFET's down to 0.07 /jm channel lengths both at low and room temperatures.

KW - Mos devices

KW - Semiconductor device modeling

UR - https://www.scopus.com/pages/publications/0032188235

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JO - IEEE Transactions on Electron Devices

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A model for the drain current of deep submicrometer MOSFET's including electron-velocity overshoot

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