A model for the quantized accumulation layer in metal-insulator-semiconductor structures

A model is proposed for the quantized accumulation layer based on the union of a two-dimensional electron gas contained in several energy subbands and a three-dimensional electron-gas distributed in a continuum of energy levels. The model is valid for both low and high temperatures and is formulated to allow the incorporation of quantum effects in a simulation based on classical models. It therefore permits the study of the different operation regions of a metal-insulator-semiconductor structure with continuity between them. Equations of the model are detailed as well as the solution procedure. The validity of the model is discussed and results obtained from both the quantum and classical model are compared. Capacitance curves obtained with both models are also compared to experimental ones.