TY - GEN
T1 - A simple model to analyze electron confinement and trapping in silicon nanodots
AU - Villanueva, Juan A.López
AU - Tejada, Juan A.Jiménez
AU - Palma, Alberto
AU - Bolívar, Salvador Rodríguez
AU - Carceller, Juan E.
PY - 2005/12/1
Y1 - 2005/12/1
N2 - A procedure has been developed for analyzing charge confinement and trapping processes in silicon nanodots embedded in the oxide of a Metal-Oxide-Semiconductor structure. The electron levels and envelope functions in both the 2DEG in the silicon substrate and the 0DEG in the nanodot have been computed by self-consistently solving the Poisson and Schrödinger equations, including non-parabolicity corrections. The transfer probabilities between the two systems have been evaluated with the Bardeen formalism by adapting a procedure previously used in quantum-dot lasers.
AB - A procedure has been developed for analyzing charge confinement and trapping processes in silicon nanodots embedded in the oxide of a Metal-Oxide-Semiconductor structure. The electron levels and envelope functions in both the 2DEG in the silicon substrate and the 0DEG in the nanodot have been computed by self-consistently solving the Poisson and Schrödinger equations, including non-parabolicity corrections. The transfer probabilities between the two systems have been evaluated with the Bardeen formalism by adapting a procedure previously used in quantum-dot lasers.
UR - https://www.scopus.com/pages/publications/33745725880
U2 - 10.1109/SCED.2005.1504400
DO - 10.1109/SCED.2005.1504400
M3 - Conference contribution
AN - SCOPUS:33745725880
SN - 0780388100
SN - 9780780388109
T3 - 2005 Spanish Conference on Electron Devices, Proceedings
SP - 345
EP - 348
BT - 2005 Spanish Conference on Electron Devices, Proceedings
T2 - 2005 Spanish Conference on Electron Devices
Y2 - 2 February 2005 through 4 February 2005
ER -