A simple subthreshold swing model for short channel MOSFETs

A new approach to calculate the subthreshold swing of short channel bulk and silicon-on-insulator metal oxide semiconductor field effect transistors is presented. The procedure utilizes a channel-potential expression appropriate for submicron dimensions. The final result is similar to that used for long channels except for a factor λ which represents the short channel effects. Comparison with different published results reveals excellent quantitative agreement.