An analytical model for the electron velocity overshoot effects in strained-Si on Si/sub x/Ge/sub 1-x/ MOSFETs

J. B. Roldan; F. Gamiz; J. A. Lopez-Villanueva; J. E. Carceller

doi:10.1109/16.662819

An analytical model for the electron velocity overshoot effects in strained-Si on Si/sub x/Ge/sub 1-x/ MOSFETs

J. B. Roldan
, F. Gamiz
, J. A. Lopez-Villanueva
, J. E. Carceller

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

3 Citas (Scopus)

Resumen

We have quantitatively described the transconductance improvement that can be obtained in deep submicron strained-Si on Si/sub x/Ge/sub 1-x/ MOSFETs with respect to conventional Si ones due to velocity overshoot effects. We have done so making use of a Monte Carlo simulator and a recently developed transconductance analytical model.

Idioma original	Inglés
Número de artículo	662819
Páginas (desde-hasta)	993-995
Número de páginas	3
Publicación	IEEE Transactions on Electron Devices
Volumen	45
N.º	4
DOI	https://doi.org/10.1109/16.662819
Estado	Publicada - 1 dic. 1998
Publicado de forma externa	Sí

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title = "An analytical model for the electron velocity overshoot effects in strained-Si on Si/sub x/Ge/sub 1-x/ MOSFETs",

abstract = "We have quantitatively described the transconductance improvement that can be obtained in deep submicron strained-Si on Si/sub x/Ge/sub 1-x/ MOSFETs with respect to conventional Si ones due to velocity overshoot effects. We have done so making use of a Monte Carlo simulator and a recently developed transconductance analytical model.",

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AU - Roldan, J. B.

AU - Gamiz, F.

AU - Lopez-Villanueva, J. A.

AU - Carceller, J. E.

PY - 1998/12/1

Y1 - 1998/12/1

N2 - We have quantitatively described the transconductance improvement that can be obtained in deep submicron strained-Si on Si/sub x/Ge/sub 1-x/ MOSFETs with respect to conventional Si ones due to velocity overshoot effects. We have done so making use of a Monte Carlo simulator and a recently developed transconductance analytical model.

AB - We have quantitatively described the transconductance improvement that can be obtained in deep submicron strained-Si on Si/sub x/Ge/sub 1-x/ MOSFETs with respect to conventional Si ones due to velocity overshoot effects. We have done so making use of a Monte Carlo simulator and a recently developed transconductance analytical model.

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U2 - 10.1109/16.662819

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An analytical model for the electron velocity overshoot effects in strained-Si on Si/sub x/Ge/sub 1-x/ MOSFETs

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