Characterization of impurities in GaInNAs pn junctions from capacitance transient spectroscopy

J. A. Jiménez Tejada; M. J. Deen; P. Lara Bullejos; J. A. López Villanueva; F. M. Gómez-Campos; S. Rodríguez-Bolívar

doi:10.1109/SCED.2007.384012

Characterization of impurities in GaInNAs pn junctions from capacitance transient spectroscopy

J. A. Jiménez Tejada
, M. J. Deen
, P. Lara Bullejos
, J. A. López Villanueva
, F. M. Gómez-Campos
, S. Rodríguez-Bolívar

Producción científica: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

Resumen

Difficulties and their solutions found during the determination of parameters of impurities in thin GaInNAs solar cells, by means of spectroscopic capacitance measurements, are presented in this work. The parameters of impurities present in the GaInNAs pn junctions are determined by an iterative method, comparing experimental capacitance transients with calculated ones. The results disagree with the ones obtained by applying the classical expressions associated to the capacitance deep level transient spectroscopy (DLTS). The parameters of the centers are used to determine the hole diffusion lengths in the semiconductor. The agreement between the hole diffusion lengths obtained with our method and results found in literature means that DLTS must be used with care when determining recombination centers in thin pn junctions. An expression to be included in the DLTS technique, that incorporates these effects, is proposed.

Idioma original	Inglés
Título de la publicación alojada	2007 Spanish Conference on Electron Devices, Proceedings
Páginas	139-142
Número de páginas	4
DOI	https://doi.org/10.1109/SCED.2007.384012
Estado	Publicada - 15 oct. 2007
Publicado de forma externa	Sí
Evento	2007 Spanish Conference on Electron Devices, SCED - Madrid, Espana Duración: 31 ene. 2007 → 2 feb. 2007

Serie de la publicación

Nombre	2007 Spanish Conference on Electron Devices, Proceedings

Conferencia

Conferencia	2007 Spanish Conference on Electron Devices, SCED
País/Territorio	Espana
Ciudad	Madrid
Período	31/01/07 → 2/02/07

ODS de las Naciones Unidas

Este resultado contribuye a los siguientes Objetivos de Desarrollo Sostenible

ODS 7: Energía asequible y no contaminante

Acceder al documento

10.1109/SCED.2007.384012

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Jiménez Tejada, J. A., Deen, M. J., Lara Bullejos, P., López Villanueva, J. A., Gómez-Campos, F. M., & Rodríguez-Bolívar, S. (2007). Characterization of impurities in GaInNAs pn junctions from capacitance transient spectroscopy. En 2007 Spanish Conference on Electron Devices, Proceedings (pp. 139-142). Artículo 4271188 (2007 Spanish Conference on Electron Devices, Proceedings). https://doi.org/10.1109/SCED.2007.384012

@inproceedings{23539f7ba3d74c388dcf3907f22de168,

title = "Characterization of impurities in GaInNAs pn junctions from capacitance transient spectroscopy",

abstract = "Difficulties and their solutions found during the determination of parameters of impurities in thin GaInNAs solar cells, by means of spectroscopic capacitance measurements, are presented in this work. The parameters of impurities present in the GaInNAs pn junctions are determined by an iterative method, comparing experimental capacitance transients with calculated ones. The results disagree with the ones obtained by applying the classical expressions associated to the capacitance deep level transient spectroscopy (DLTS). The parameters of the centers are used to determine the hole diffusion lengths in the semiconductor. The agreement between the hole diffusion lengths obtained with our method and results found in literature means that DLTS must be used with care when determining recombination centers in thin pn junctions. An expression to be included in the DLTS technique, that incorporates these effects, is proposed.",

keywords = "Capacitance measurement, Photovoltaic cells, Semiconductor impurities, Semiconductor junctions",

author = "\{Jim{\'e}nez Tejada\}, \{J. A.\} and Deen, \{M. J.\} and \{Lara Bullejos\}, P. and \{L{\'o}pez Villanueva\}, \{J. A.\} and G{\'o}mez-Campos, \{F. M.\} and S. Rodr{\'i}guez-Bol{\'i}var",

year = "2007",

month = oct,

day = "15",

doi = "10.1109/SCED.2007.384012",

language = "English",

isbn = "1424408687",

series = "2007 Spanish Conference on Electron Devices, Proceedings",

pages = "139--142",

booktitle = "2007 Spanish Conference on Electron Devices, Proceedings",

note = "2007 Spanish Conference on Electron Devices, SCED ; Conference date: 31-01-2007 Through 02-02-2007",

}

Jiménez Tejada, JA, Deen, MJ, Lara Bullejos, P, López Villanueva, JA, Gómez-Campos, FM & Rodríguez-Bolívar, S 2007, Characterization of impurities in GaInNAs pn junctions from capacitance transient spectroscopy. En 2007 Spanish Conference on Electron Devices, Proceedings., 4271188, 2007 Spanish Conference on Electron Devices, Proceedings, pp. 139-142, 2007 Spanish Conference on Electron Devices, SCED, Madrid, Espana, 31/01/07. https://doi.org/10.1109/SCED.2007.384012

Characterization of impurities in GaInNAs pn junctions from capacitance transient spectroscopy. / Jiménez Tejada, J. A.; Deen, M. J.; Lara Bullejos, P. et al.
2007 Spanish Conference on Electron Devices, Proceedings. 2007. p. 139-142 4271188 (2007 Spanish Conference on Electron Devices, Proceedings).

Producción científica: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

TY - GEN

T1 - Characterization of impurities in GaInNAs pn junctions from capacitance transient spectroscopy

AU - Jiménez Tejada, J. A.

AU - Deen, M. J.

AU - Lara Bullejos, P.

AU - López Villanueva, J. A.

AU - Gómez-Campos, F. M.

AU - Rodríguez-Bolívar, S.

PY - 2007/10/15

Y1 - 2007/10/15

N2 - Difficulties and their solutions found during the determination of parameters of impurities in thin GaInNAs solar cells, by means of spectroscopic capacitance measurements, are presented in this work. The parameters of impurities present in the GaInNAs pn junctions are determined by an iterative method, comparing experimental capacitance transients with calculated ones. The results disagree with the ones obtained by applying the classical expressions associated to the capacitance deep level transient spectroscopy (DLTS). The parameters of the centers are used to determine the hole diffusion lengths in the semiconductor. The agreement between the hole diffusion lengths obtained with our method and results found in literature means that DLTS must be used with care when determining recombination centers in thin pn junctions. An expression to be included in the DLTS technique, that incorporates these effects, is proposed.

AB - Difficulties and their solutions found during the determination of parameters of impurities in thin GaInNAs solar cells, by means of spectroscopic capacitance measurements, are presented in this work. The parameters of impurities present in the GaInNAs pn junctions are determined by an iterative method, comparing experimental capacitance transients with calculated ones. The results disagree with the ones obtained by applying the classical expressions associated to the capacitance deep level transient spectroscopy (DLTS). The parameters of the centers are used to determine the hole diffusion lengths in the semiconductor. The agreement between the hole diffusion lengths obtained with our method and results found in literature means that DLTS must be used with care when determining recombination centers in thin pn junctions. An expression to be included in the DLTS technique, that incorporates these effects, is proposed.

KW - Capacitance measurement

KW - Photovoltaic cells

KW - Semiconductor impurities

KW - Semiconductor junctions

UR - https://www.scopus.com/pages/publications/35148848812

U2 - 10.1109/SCED.2007.384012

DO - 10.1109/SCED.2007.384012

M3 - Conference contribution

AN - SCOPUS:35148848812

SN - 1424408687

SN - 9781424408689

T3 - 2007 Spanish Conference on Electron Devices, Proceedings

SP - 139

EP - 142

BT - 2007 Spanish Conference on Electron Devices, Proceedings

T2 - 2007 Spanish Conference on Electron Devices, SCED

Y2 - 31 January 2007 through 2 February 2007

ER -

Jiménez Tejada JA, Deen MJ, Lara Bullejos P, López Villanueva JA, Gómez-Campos FM, Rodríguez-Bolívar S. Characterization of impurities in GaInNAs pn junctions from capacitance transient spectroscopy. En 2007 Spanish Conference on Electron Devices, Proceedings. 2007. p. 139-142. 4271188. (2007 Spanish Conference on Electron Devices, Proceedings). doi: 10.1109/SCED.2007.384012

Characterization of impurities in GaInNAs pn junctions from capacitance transient spectroscopy

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