Characterization of oxygen related defects in silicon p-n junctions

J. A. Jiménez Tejada; J. A. López Villanueva; A. Godoy; F. M. Gómez-Campos; S. Rodríguez-Bolívar; J. E. Carceller

doi:10.1109/SCED.2005.1504300

Characterization of oxygen related defects in silicon p-n junctions

J. A. Jiménez Tejada
, J. A. López Villanueva
, A. Godoy
, F. M. Gómez-Campos
, S. Rodríguez-Bolívar
, J. E. Carceller

Producción científica: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

1 Cita (Scopus)

Resumen

One of the levels that is frequently detected in Czochralski-grown silicon (Cz-Si) by different authors is analyzed in a p-n⁺ junction at low and room temperatures for different bias conditions. We examine the results from different experimental techniques, usually employed to extract parameters in p-n junctions, to acquire a better understanding of the electrical activity of oxygen in Cz-Si, The reason of studying these results is because different electrical conditions during the characterization of identical samples can lead to contradictory conclusions. In order to link these disparate results we show how one of the oxygen related defects can act as a hole trap or as an electron trap at different temperatures.

Idioma original	Inglés
Título de la publicación alojada	2005 Spanish Conference on Electron Devices, Proceedings
Páginas	37-40
Número de páginas	4
DOI	https://doi.org/10.1109/SCED.2005.1504300
Estado	Publicada - 1 dic. 2005
Publicado de forma externa	Sí
Evento	2005 Spanish Conference on Electron Devices - Tarragona, Espana Duración: 2 feb. 2005 → 4 feb. 2005

Serie de la publicación

Nombre	2005 Spanish Conference on Electron Devices, Proceedings
Volumen	2005

Conferencia

Conferencia	2005 Spanish Conference on Electron Devices
País/Territorio	Espana
Ciudad	Tarragona
Período	2/02/05 → 4/02/05

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10.1109/SCED.2005.1504300

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Jiménez Tejada, J. A., López Villanueva, J. A., Godoy, A., Gómez-Campos, F. M., Rodríguez-Bolívar, S., & Carceller, J. E. (2005). Characterization of oxygen related defects in silicon p-n junctions. En 2005 Spanish Conference on Electron Devices, Proceedings (pp. 37-40). Artículo 1504300 (2005 Spanish Conference on Electron Devices, Proceedings; Vol. 2005). https://doi.org/10.1109/SCED.2005.1504300

@inproceedings{2f8761a4ddd44bf4a6d31a2d311c05cb,

title = "Characterization of oxygen related defects in silicon p-n junctions",

abstract = "One of the levels that is frequently detected in Czochralski-grown silicon (Cz-Si) by different authors is analyzed in a p-n+ junction at low and room temperatures for different bias conditions. We examine the results from different experimental techniques, usually employed to extract parameters in p-n junctions, to acquire a better understanding of the electrical activity of oxygen in Cz-Si, The reason of studying these results is because different electrical conditions during the characterization of identical samples can lead to contradictory conclusions. In order to link these disparate results we show how one of the oxygen related defects can act as a hole trap or as an electron trap at different temperatures.",

author = "\{Jim{\'e}nez Tejada\}, \{J. A.\} and \{L{\'o}pez Villanueva\}, \{J. A.\} and A. Godoy and G{\'o}mez-Campos, \{F. M.\} and S. Rodr{\'i}guez-Bol{\'i}var and Carceller, \{J. E.\}",

year = "2005",

month = dec,

day = "1",

doi = "10.1109/SCED.2005.1504300",

language = "English",

isbn = "0780388100",

series = "2005 Spanish Conference on Electron Devices, Proceedings",

pages = "37--40",

booktitle = "2005 Spanish Conference on Electron Devices, Proceedings",

note = "2005 Spanish Conference on Electron Devices ; Conference date: 02-02-2005 Through 04-02-2005",

}

Jiménez Tejada, JA, López Villanueva, JA, Godoy, A, Gómez-Campos, FM, Rodríguez-Bolívar, S & Carceller, JE 2005, Characterization of oxygen related defects in silicon p-n junctions. En 2005 Spanish Conference on Electron Devices, Proceedings., 1504300, 2005 Spanish Conference on Electron Devices, Proceedings, vol. 2005, pp. 37-40, 2005 Spanish Conference on Electron Devices, Tarragona, Espana, 2/02/05. https://doi.org/10.1109/SCED.2005.1504300

Characterization of oxygen related defects in silicon p-n junctions. / Jiménez Tejada, J. A.; López Villanueva, J. A.; Godoy, A. et al.
2005 Spanish Conference on Electron Devices, Proceedings. 2005. p. 37-40 1504300 (2005 Spanish Conference on Electron Devices, Proceedings; Vol. 2005).

Producción científica: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

TY - GEN

T1 - Characterization of oxygen related defects in silicon p-n junctions

AU - Jiménez Tejada, J. A.

AU - López Villanueva, J. A.

AU - Godoy, A.

AU - Gómez-Campos, F. M.

AU - Rodríguez-Bolívar, S.

AU - Carceller, J. E.

PY - 2005/12/1

Y1 - 2005/12/1

N2 - One of the levels that is frequently detected in Czochralski-grown silicon (Cz-Si) by different authors is analyzed in a p-n+ junction at low and room temperatures for different bias conditions. We examine the results from different experimental techniques, usually employed to extract parameters in p-n junctions, to acquire a better understanding of the electrical activity of oxygen in Cz-Si, The reason of studying these results is because different electrical conditions during the characterization of identical samples can lead to contradictory conclusions. In order to link these disparate results we show how one of the oxygen related defects can act as a hole trap or as an electron trap at different temperatures.

AB - One of the levels that is frequently detected in Czochralski-grown silicon (Cz-Si) by different authors is analyzed in a p-n+ junction at low and room temperatures for different bias conditions. We examine the results from different experimental techniques, usually employed to extract parameters in p-n junctions, to acquire a better understanding of the electrical activity of oxygen in Cz-Si, The reason of studying these results is because different electrical conditions during the characterization of identical samples can lead to contradictory conclusions. In order to link these disparate results we show how one of the oxygen related defects can act as a hole trap or as an electron trap at different temperatures.

UR - https://www.scopus.com/pages/publications/33745711917

U2 - 10.1109/SCED.2005.1504300

DO - 10.1109/SCED.2005.1504300

M3 - Conference contribution

AN - SCOPUS:33745711917

SN - 0780388100

SN - 9780780388109

T3 - 2005 Spanish Conference on Electron Devices, Proceedings

SP - 37

EP - 40

BT - 2005 Spanish Conference on Electron Devices, Proceedings

T2 - 2005 Spanish Conference on Electron Devices

Y2 - 2 February 2005 through 4 February 2005

ER -

Characterization of oxygen related defects in silicon p-n junctions

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