TY - GEN
T1 - Computational study of InAs/GaAs quantum dot arrays
AU - Gómez-Campos, F. M.
AU - Rodríguez-Bolívar, S.
AU - Luque-Rodríguez, A.
AU - López-Villanueva, J. A.
AU - Carceller, J. E.
PY - 2010/12/1
Y1 - 2010/12/1
N2 - In this work we have theoretically investigated photon absorption coefficient in ordered InAs/GaAs cubic quantum dot systems. We solved the Schrödinger equation associated with these structures, using a set of 13x13x13 plane waves at 12,167 equally spaced points of the Q space. We investigated the transitions between minibands arising from the conduction band, taking into account the different effective masses in each material in our calculations. The effects of the strain were included by taking a conduction band offset of 0.5 eV, corresponding to strained InAs in GaAs.
AB - In this work we have theoretically investigated photon absorption coefficient in ordered InAs/GaAs cubic quantum dot systems. We solved the Schrödinger equation associated with these structures, using a set of 13x13x13 plane waves at 12,167 equally spaced points of the Q space. We investigated the transitions between minibands arising from the conduction band, taking into account the different effective masses in each material in our calculations. The effects of the strain were included by taking a conduction band offset of 0.5 eV, corresponding to strained InAs in GaAs.
KW - Component
KW - Miniband structure
KW - Ordered nanostructures
KW - Photon absorption coefficient
KW - Quantum dot
UR - https://www.scopus.com/pages/publications/78751690701
U2 - 10.1109/IWCE.2010.5677976
DO - 10.1109/IWCE.2010.5677976
M3 - Conference contribution
AN - SCOPUS:78751690701
SN - 9781424493845
T3 - 2010 14th International Workshop on Computational Electronics, IWCE 2010
SP - 223
EP - 226
BT - 2010 14th International Workshop on Computational Electronics, IWCE 2010
T2 - 2010 14th International Workshop on Computational Electronics, IWCE 2010
Y2 - 26 October 2010 through 29 October 2010
ER -