Computational study of the strained-Si MOSFET: A possible alternative for the next century electronics industry

J. B. Roldán; F. Gámiz; J. A. López-Villanueva; J. E. Carceller; P. Cartujo

doi:10.1016/S0010-4655(99)00404-X

Computational study of the strained-Si MOSFET: A possible alternative for the next century electronics industry

J. B. Roldán
, F. Gámiz
, J. A. López-Villanueva
, J. E. Carceller
, P. Cartujo

Producción científica: Contribución a una revista › Artículo de la conferencia › revisión exhaustiva

1 Cita (Scopus)

Resumen

We have studied in depth the performance of superficial and buried strained-Si/Si_xGe_1-x channel Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFET). To do so, we developed a two-dimensional simulator in which Poisson, Schrodinger and Boltzmann equations have been self-consistently solved. The dependences of the performance enhancement on the germanium mole fraction obtained in these devices both at low- and high-longitudinal electric fields in the channel are described. The simulator has been validated by reproducing experimental results.

Idioma original	Inglés
Páginas (desde-hasta)	547-549
Número de páginas	3
Publicación	Computer Physics Communications
Volumen	121
DOI	https://doi.org/10.1016/S0010-4655(99)00404-X
Estado	Publicada - 1 ene. 1999
Publicado de forma externa	Sí
Evento	Proceedings of the 1998 Europhysics Conference on Computational Physics (CCP 1998) - Granada, Spain Duración: 2 set. 1998 → 5 set. 1998

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title = "Computational study of the strained-Si MOSFET: A possible alternative for the next century electronics industry",

abstract = "We have studied in depth the performance of superficial and buried strained-Si/SixGe1-x channel Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFET). To do so, we developed a two-dimensional simulator in which Poisson, Schrodinger and Boltzmann equations have been self-consistently solved. The dependences of the performance enhancement on the germanium mole fraction obtained in these devices both at low- and high-longitudinal electric fields in the channel are described. The simulator has been validated by reproducing experimental results.",

author = "Rold{\'a}n, \{J. B.\} and F. G{\'a}miz and L{\'o}pez-Villanueva, \{J. A.\} and Carceller, \{J. E.\} and P. Cartujo",

year = "1999",

month = jan,

day = "1",

doi = "10.1016/S0010-4655(99)00404-X",

language = "English",

volume = "121",

pages = "547--549",

journal = "Computer Physics Communications",

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note = "Proceedings of the 1998 Europhysics Conference on Computational Physics (CCP 1998) ; Conference date: 02-09-1998 Through 05-09-1998",

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TY - JOUR

T1 - Computational study of the strained-Si MOSFET

T2 - Proceedings of the 1998 Europhysics Conference on Computational Physics (CCP 1998)

AU - Roldán, J. B.

AU - Gámiz, F.

AU - López-Villanueva, J. A.

AU - Carceller, J. E.

AU - Cartujo, P.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - We have studied in depth the performance of superficial and buried strained-Si/SixGe1-x channel Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFET). To do so, we developed a two-dimensional simulator in which Poisson, Schrodinger and Boltzmann equations have been self-consistently solved. The dependences of the performance enhancement on the germanium mole fraction obtained in these devices both at low- and high-longitudinal electric fields in the channel are described. The simulator has been validated by reproducing experimental results.

AB - We have studied in depth the performance of superficial and buried strained-Si/SixGe1-x channel Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFET). To do so, we developed a two-dimensional simulator in which Poisson, Schrodinger and Boltzmann equations have been self-consistently solved. The dependences of the performance enhancement on the germanium mole fraction obtained in these devices both at low- and high-longitudinal electric fields in the channel are described. The simulator has been validated by reproducing experimental results.

UR - https://www.scopus.com/pages/publications/17644429045

U2 - 10.1016/S0010-4655(99)00404-X

DO - 10.1016/S0010-4655(99)00404-X

M3 - Conference article

AN - SCOPUS:17644429045

SN - 0010-4655

VL - 121

SP - 547

EP - 549

JO - Computer Physics Communications

JF - Computer Physics Communications

Y2 - 2 September 1998 through 5 September 1998

ER -

Computational study of the strained-Si MOSFET: A possible alternative for the next century electronics industry

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