Deep submicrometer SOI MOSFET drain current model including series resistance, self-heating and velocity overshoot effects

J. B. Roldán; F. Gámiz; J. A. López-Villanueva; P. Cartujo-Cassinello

doi:10.1109/55.841308

Deep submicrometer SOI MOSFET drain current model including series resistance, self-heating and velocity overshoot effects

J. B. Roldán
, F. Gámiz
, J. A. López-Villanueva
, P. Cartujo-Cassinello

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

16 Citas (Scopus)

Resumen

We have developed a new analytical ultrashort channel SOI MOSFET for circuit simulation where the effects of series resistance, self-heating and velocity overshoot are included. We have reproduced experimental measurements validating our model. Its simplicity allowed us to study the contribution of each effect separately in an easy way.

Idioma original	Inglés
Páginas (desde-hasta)	239-241
Número de páginas	3
Publicación	IEEE Electron Device Letters
Volumen	21
N.º	5
DOI	https://doi.org/10.1109/55.841308
Estado	Publicada - 1 may. 2000
Publicado de forma externa	Sí

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abstract = "We have developed a new analytical ultrashort channel SOI MOSFET for circuit simulation where the effects of series resistance, self-heating and velocity overshoot are included. We have reproduced experimental measurements validating our model. Its simplicity allowed us to study the contribution of each effect separately in an easy way.",

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AU - Gámiz, F.

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AU - Cartujo-Cassinello, P.

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AB - We have developed a new analytical ultrashort channel SOI MOSFET for circuit simulation where the effects of series resistance, self-heating and velocity overshoot are included. We have reproduced experimental measurements validating our model. Its simplicity allowed us to study the contribution of each effect separately in an easy way.

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Deep submicrometer SOI MOSFET drain current model including series resistance, self-heating and velocity overshoot effects

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