TY - JOUR
T1 - Determination of the concentration of recombination centers in thin asymmetrical p-n junctions from capacitance transient spectroscopy
AU - Tejada, Juan A.Jiménez
AU - Bullejos, Pablo Lara
AU - Villanueva, Juan A.López
AU - Gómez-Campos, Francisco M.
AU - Rodríguez-Bolívar, Salvador
AU - Deen, M. Jamal
PY - 2006/9/21
Y1 - 2006/9/21
N2 - Recombination centers in thin asymmetrical p-n junctions were analyzed in the context of capacitance transient experiments. The combined effect of the thin low-doped region of the junction and the nonzero value of the occupation factor of the recombination center in the depletion layer caused electrons and holes to be simultaneously released from different parts of this layer during an emission transient. The need to introduce modifications in the analytical expressions that determine the parameters of these centers by capacitance transient spectroscopy is demonstrated. A correction formula to determine concentrations of electron or hole traps or recombination centers is proposed.
AB - Recombination centers in thin asymmetrical p-n junctions were analyzed in the context of capacitance transient experiments. The combined effect of the thin low-doped region of the junction and the nonzero value of the occupation factor of the recombination center in the depletion layer caused electrons and holes to be simultaneously released from different parts of this layer during an emission transient. The need to introduce modifications in the analytical expressions that determine the parameters of these centers by capacitance transient spectroscopy is demonstrated. A correction formula to determine concentrations of electron or hole traps or recombination centers is proposed.
UR - https://www.scopus.com/pages/publications/33748701889
U2 - 10.1063/1.2348772
DO - 10.1063/1.2348772
M3 - Article
AN - SCOPUS:33748701889
SN - 0003-6951
VL - 89
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 11
M1 - 112107
ER -