Effect of traps in the performance of four gate transistors

A. Luque Rodriguez; J. A.Jimenez Tejada; A. Godoy; J. A.López Villanueva; F. M. Gómez-Campos; S. Rodríguez-Bolivar

doi:10.1109/SCED.2009.4800448

Effect of traps in the performance of four gate transistors

A. Luque Rodriguez
, J. A.Jimenez Tejada
, A. Godoy
, J. A.López Villanueva
, F. M. Gómez-Campos
, S. Rodríguez-Bolivar

Producción científica: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

3 Citas (Scopus)

Resumen

In this work, a study of traps located in the bulk and the Si-SiO ₂ interfaces of four gate transistors (G⁴-FETs), and their effect in the performance of these transistors, is presented. Different kinds of low frequency noise spectra measured at different voltages applied to the gates show that traps in the bulk and traps at the interfaces are the origin of such different spectra. We propose a model to evaluate low frequency noise produced in the bulk and surfaces of the device. This model is incorporated in a 2D simulator that confirms the experimental trends. It also allows us to separate the contribution of both sources and study the effects of different kinds of bulk traps on the low frequency noise.

Idioma original	Inglés
Título de la publicación alojada	Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09
Páginas	132-135
Número de páginas	4
DOI	https://doi.org/10.1109/SCED.2009.4800448
Estado	Publicada - 24 abr. 2009
Publicado de forma externa	Sí
Evento	2009 Spanish Conference on Electron Devices, CDE'09 - Santiago de Compostela, Espana Duración: 11 feb. 2009 → 13 feb. 2009

Serie de la publicación

Nombre	Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

Conferencia

Conferencia	2009 Spanish Conference on Electron Devices, CDE'09
País/Territorio	Espana
Ciudad	Santiago de Compostela
Período	11/02/09 → 13/02/09

Acceder al documento

10.1109/SCED.2009.4800448

Otros archivos y enlaces

Enlace a la publicación en Scopus

Citar esto

Rodriguez, A. L., Tejada, J. A. J., Godoy, A., Villanueva, J. A. L., Gómez-Campos, F. M., & Rodríguez-Bolivar, S. (2009). Effect of traps in the performance of four gate transistors. En Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09 (pp. 132-135). Artículo 4800448 (Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09). https://doi.org/10.1109/SCED.2009.4800448

@inproceedings{beec1e4834b14058a2d89eb7f9629c77,

title = "Effect of traps in the performance of four gate transistors",

abstract = "In this work, a study of traps located in the bulk and the Si-SiO 2 interfaces of four gate transistors (G4-FETs), and their effect in the performance of these transistors, is presented. Different kinds of low frequency noise spectra measured at different voltages applied to the gates show that traps in the bulk and traps at the interfaces are the origin of such different spectra. We propose a model to evaluate low frequency noise produced in the bulk and surfaces of the device. This model is incorporated in a 2D simulator that confirms the experimental trends. It also allows us to separate the contribution of both sources and study the effects of different kinds of bulk traps on the low frequency noise.",

author = "Rodriguez, \{A. Luque\} and Tejada, \{J. A.Jimenez\} and A. Godoy and Villanueva, \{J. A.L{\'o}pez\} and G{\'o}mez-Campos, \{F. M.\} and S. Rodr{\'i}guez-Bolivar",

year = "2009",

month = apr,

day = "24",

doi = "10.1109/SCED.2009.4800448",

language = "English",

isbn = "9781424428397",

series = "Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09",

pages = "132--135",

booktitle = "Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09",

note = "2009 Spanish Conference on Electron Devices, CDE'09 ; Conference date: 11-02-2009 Through 13-02-2009",

}

Rodriguez, AL, Tejada, JAJ, Godoy, A, Villanueva, JAL, Gómez-Campos, FM & Rodríguez-Bolivar, S 2009, Effect of traps in the performance of four gate transistors. En Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09., 4800448, Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09, pp. 132-135, 2009 Spanish Conference on Electron Devices, CDE'09, Santiago de Compostela, Espana, 11/02/09. https://doi.org/10.1109/SCED.2009.4800448

Effect of traps in the performance of four gate transistors. / Rodriguez, A. Luque; Tejada, J. A.Jimenez; Godoy, A. et al.
Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09. 2009. p. 132-135 4800448 (Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09).

Producción científica: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

TY - GEN

T1 - Effect of traps in the performance of four gate transistors

AU - Rodriguez, A. Luque

AU - Tejada, J. A.Jimenez

AU - Godoy, A.

AU - Villanueva, J. A.López

AU - Gómez-Campos, F. M.

AU - Rodríguez-Bolivar, S.

PY - 2009/4/24

Y1 - 2009/4/24

N2 - In this work, a study of traps located in the bulk and the Si-SiO 2 interfaces of four gate transistors (G4-FETs), and their effect in the performance of these transistors, is presented. Different kinds of low frequency noise spectra measured at different voltages applied to the gates show that traps in the bulk and traps at the interfaces are the origin of such different spectra. We propose a model to evaluate low frequency noise produced in the bulk and surfaces of the device. This model is incorporated in a 2D simulator that confirms the experimental trends. It also allows us to separate the contribution of both sources and study the effects of different kinds of bulk traps on the low frequency noise.

AB - In this work, a study of traps located in the bulk and the Si-SiO 2 interfaces of four gate transistors (G4-FETs), and their effect in the performance of these transistors, is presented. Different kinds of low frequency noise spectra measured at different voltages applied to the gates show that traps in the bulk and traps at the interfaces are the origin of such different spectra. We propose a model to evaluate low frequency noise produced in the bulk and surfaces of the device. This model is incorporated in a 2D simulator that confirms the experimental trends. It also allows us to separate the contribution of both sources and study the effects of different kinds of bulk traps on the low frequency noise.

UR - https://www.scopus.com/pages/publications/64949194818

U2 - 10.1109/SCED.2009.4800448

DO - 10.1109/SCED.2009.4800448

M3 - Conference contribution

AN - SCOPUS:64949194818

SN - 9781424428397

T3 - Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

SP - 132

EP - 135

BT - Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

T2 - 2009 Spanish Conference on Electron Devices, CDE'09

Y2 - 11 February 2009 through 13 February 2009

ER -

Effect of traps in the performance of four gate transistors

Resumen

Serie de la publicación

Conferencia

Acceder al documento

Otros archivos y enlaces

Huella

Citar esto